Analysis of the relationship between defect site generation and dielectric breakdown utilizing A-mode stress induced leakage current

IEEE Transactions on Electron Devices

Volumn 47, Issue 6, 2000, Pages 1225-1230

  Okada, Kenji ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC LOSSES; ELECTRIC BREAKDOWN OF SOLIDS; LEAKAGE CURRENTS; MATHEMATICAL MODELS; MOS CAPACITORS; MOSFET DEVICES; SEMICONDUCTOR DEVICE TESTING; THRESHOLD VOLTAGE;

A-MODE STRESS INDUCED LEAKAGE CURRENTS; BREAKDOWN PATH CREATION; DIELECTRIC BREAKDOWN;

SEMICONDUCTING FILMS;

EID: 0033731780     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.842966     Document Type: Article

References (16)

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