Implications of progressive wear-out for lifetime extrapolation of ultra-thin (EOT - 1 nm) SiON films

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 713-716

  Kaczer, B ^a   Degraeve, R ^a   O'Connor, R ^b   Roussel, Ph ^a   Groeseneken, G ^a  

^a IMEC   (Belgium)

^b DUBLIN CITY UNIVERSITY   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTANCE; ELECTRIC POTENTIAL; EXTRAPOLATION; FIELD EFFECT TRANSISTORS; LEAKAGE CURRENTS; SILICON COMPOUNDS; WEAR OF MATERIALS; WEIBULL DISTRIBUTION; ULTRATHIN FILMS;

GATE CURRENT; STRESS VOLTAGE; ULTRATHIN OXIDES; VOLTAGE FACTORS;

ULTRATHIN FILMS; EXTRAPOLATION;

GATE CURRENT; LIFETIME EXTRAPOLATION; LIFETIME PREDICTION; PROGRESSIVE BREAKDOWN; RELIABILITY EXTRAPOLATION; SEMIEMPIRICAL MODELS; SION FILM; ULTRA-THIN; ULTRA-THIN OXIDE;

EID: 21644473075     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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