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Volumn , Issue , 2003, Pages 402-405

Growth and scaling of oxide conduction after breakdown

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; GROWTH (MATERIALS); STRESS ANALYSIS;

EID: 0038649017     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (34)

References (12)
  • 1
    • 0034979786 scopus 로고    scopus 로고
    • Physical and predictive models of ultra thin oxide reliability in CMOS devices and circuits
    • March
    • J. H. Stathis "Physical and predictive models of ultra thin oxide reliability in CMOS devices and circuits," in Proceedings of International Reliability Physics Symposium, March 2001, pp. 132-149.
    • (2001) Proceedings of International Reliability Physics Symposium , pp. 132-149
    • Stathis, J.H.1
  • 2
    • 0033752184 scopus 로고    scopus 로고
    • Reliability: A possible showstopper for oxide thickness scaling?
    • May
    • R. Degraeve, B. Kaczer, and G. Groeseneken, "Reliability: a possible showstopper for oxide thickness scaling?," Semiconductor Science and Technology., vol. 15, no. 5, pp. 436-444, May, 2000.
    • (2000) Semiconductor Science and Technology. , vol.15 , Issue.5 , pp. 436-444
    • Degraeve, R.1    Kaczer, B.2    Groeseneken, G.3
  • 6
    • 0035393201 scopus 로고    scopus 로고
    • Wear-out breakdown occurrence and failure detection in 18-25 A ultra-thin oxides
    • July
    • F. Monsieur, E. Vincent, G. Pananakakis, and G. Ghibaudo, "Wear-out breakdown occurrence and failure detection in 18-25 A ultra-thin oxides," Microelectronics Reliability, vol. 41, no.7, pp. 1035-1039, July, 2001.
    • (2001) Microelectronics Reliability , vol.41 , Issue.7 , pp. 1035-1039
    • Monsieur, F.1    Vincent, E.2    Pananakakis, G.3    Ghibaudo, G.4
  • 7
    • 0033749122 scopus 로고    scopus 로고
    • The gate oxide lifetime limited by 'B-mode' stress induced leakage current and the scaling limit of silicon dioxides in the direct tunneling regime
    • May
    • K. Okada, "The gate oxide lifetime limited by 'B-mode' stress induced leakage current and the scaling limit of silicon dioxides in the direct tunneling regime.", Semiconductor Science and Technology, vol. 15, no. 5, pp. 478-484, May, 2000.
    • (2000) Semiconductor Science and Technology , vol.15 , Issue.5 , pp. 478-484
    • Okada, K.1
  • 8
    • 0035310837 scopus 로고    scopus 로고
    • Soft breakdown and hard breakdown in ultra-thin oxides
    • April
    • T. Pompl, C. Engel, H. Wurzer, and M. Kerber, "Soft breakdown and hard breakdown in ultra-thin oxides," Microelectronics Reliability, vol. 41, no.4, pp. 543-551, April, 2001.
    • (2001) Microelectronics Reliability , vol.41 , Issue.4 , pp. 543-551
    • Pompl, T.1    Engel, C.2    Wurzer, H.3    Kerber, M.4
  • 11
    • 0347155006 scopus 로고    scopus 로고
    • Reduction of thermal damage in ultrathin gate oxides after intrinsic dielectric breakdown
    • Sept. 3
    • S. Lombardo, A. La Magna, I. Crupi, C. Gerardi, and F. Crupi, "Reduction of thermal damage in ultrathin gate oxides after intrinsic dielectric breakdown," Applied Physics Letters, vol. 79, no. 10, pp. 1522-4, Sept. 3,2001.
    • (2001) Applied Physics Letters , vol.79 , Issue.10 , pp. 1522-1524
    • Lombardo, S.1    La Magna, A.2    Crupi, I.3    Gerardi, C.4    Crupi, F.5
  • 12
    • 0030699860 scopus 로고    scopus 로고
    • New dielectric breakdown model of local wearout in ultra thin silicon dioxides
    • June
    • K. Okada and S. Kawasaki, "New Dielectric Breakdown Model of Local Wearout in Ultra Thin Silicon Dioxides," in Proceedings of VLSI Technology Symp., June 1997, pp. 143-144.
    • (1997) Proceedings of VLSI Technology Symp. , pp. 143-144
    • Okada, K.1    Kawasaki, S.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.