Localized oxide degradation in ultrathin gate dielectric and its statistical analysis

IEEE Transactions on Electron Devices

Volumn 50, Issue 4, 2003, Pages 967-972

  Loh, Wei Yip ^a   Cho, Byung Jin ^a   Li, Ming Fu ^a   Chan, Daniel S H ^a   Ang, Chew Hoe ^b   Zheng, Jia Zhen ^b   Kwong, Dim Lee ^c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^c The University of Texas at Austin   (United States)

Author keywords

Gate leakage current; Oxide degradation; Reliability; Tunneling; Ultrathin gate oxide

Indexed keywords

CMOS INTEGRATED CIRCUITS; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DEGRADATION; ELECTRON TUNNELING; LEAKAGE CURRENTS; MOSFET DEVICES; OXIDES; STRESSES; ULTRATHIN FILMS; WEIBULL DISTRIBUTION;

ELECTRICAL STRESS;

GATES (TRANSISTOR);

EID: 0037818474     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.812105     Document Type: Article

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