Inelastic electron tunneling via molecular vibrations in single-molecule transistors

Physical Review Letters

Volumn 93, Issue 26 I, 2004, Pages

  Yu, L H ^a   Keane, Z K ^a   Ciszek, J W ^a   Cheng, L ^a   Stewart, M P ^a   Tour, J M ^a   Natelson, D ^a,b  

^a RICE UNIVERSITY   (United States)

^b Rice University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE ELECTRODE; INELASTIC ELECTRON TUNNELING SPECTROSCOPY (IETS); KONDO RESONANCE; SINGLE-MOLECULE TRANSISTORS (SMT);

CURRENT VOLTAGE CHARACTERISTICS; CYCLIC VOLTAMMETRY; DIFFERENTIATION (CALCULUS); ELECTROCHEMISTRY; ELECTROMIGRATION; ELECTRON ENERGY LEVELS; ELLIPSOMETRY; INFRARED SPECTROSCOPY; MOLECULAR VIBRATIONS; RAMAN SPECTROSCOPY; SCANNING TUNNELING MICROSCOPY; TRANSISTORS; X RAY CRYSTALLOGRAPHY;

ELECTRON TUNNELING;

EID: 31544445424     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.93.266802     Document Type: Article

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