Field-effect transistor on pentacene single crystal

Applied Physics Letters

Volumn 83, Issue 23, 2003, Pages 4773-4775

  Butko, V Y ^a,b   Chi, X ^a   Lang, D V ^a,c   Ramirez, A P ^a,c  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b IOFFE INSTITUTE   (Russian Federation)

^c LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FREE CARRIERS; PLANAR DEVICES; THERMAL EQUILIBRIUM;

ACTIVATION ENERGY; CHARGE CARRIERS; CONCENTRATION (PROCESS); CRYOSTATS; CRYSTAL GROWTH; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE MEASUREMENT; FERMI LEVEL; HOLE MOBILITY; LEAKAGE CURRENTS; MOLECULAR VIBRATIONS; RECRYSTALLIZATION (METALLURGY); SINGLE CRYSTALS; TEMPERATURE MEASUREMENT; THIN FILMS; VOLTAGE MEASUREMENT;

FIELD EFFECT TRANSISTORS;

EID: 0346306371     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1631736     Document Type: Article

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