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Volumn 83, Issue 21, 2003, Pages 4345-4347

Field-effect transistors on tetracene single crystals

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CRYSTAL STRUCTURE; ELECTRIC FIELD EFFECTS; ELECTRIC PROPERTIES; ELECTRON DEVICE MANUFACTURE; OLEFINS; SINGLE CRYSTALS; THERMAL EFFECTS; THIN FILMS; THRESHOLD VOLTAGE;

EID: 0347477178     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1629144     Document Type: Article
Times cited : (298)

References (28)
  • 15
    • 0346698716 scopus 로고    scopus 로고
    • note
    • A similar technique has been used for crystals of different molecules, see Refs. 13 and 14.
  • 17
    • 0346067917 scopus 로고    scopus 로고
    • note
    • Without RIE cleaning we observe a large spread in mobilities, which are on average much lower than the mobility of FETs made on RIE cleaned substrates. Additionally, we find much larger hysteresis in the electrical measurements and a large negative threshold voltage.
  • 20
    • 0346698717 scopus 로고    scopus 로고
    • note
    • For holes, a positive threshold voltage implies conduction through the device in the absence of an applied gate voltage.
  • 28
    • 0347959390 scopus 로고    scopus 로고
    • note
    • TOF experiments give a measure of the bulk mobility of charge carriers in the c direction of the crystal, whereas FET experiments probe the mobility of charge carriers at the crystal surface.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.