-
1
-
-
0035339596
-
-
B. K. Crone, A. Dodabalapur, R. Sarpeshkar, R. W. Filas, Y.-Y. Lin, Z. Bao, J. H. O'Neill, W. Li, and H. E. Katz, J. Appl. Phys. 89, 5125 (2001).
-
(2001)
J. Appl. Phys.
, vol.89
, pp. 5125
-
-
Crone, B.K.1
Dodabalapur, A.2
Sarpeshkar, R.3
Filas, R.W.4
Lin, Y.-Y.5
Bao, Z.6
O'Neill, J.H.7
Li, W.8
Katz, H.E.9
-
8
-
-
18744383136
-
-
H. Klauk, M. Halik, U. Zschieschang, G. Schmid, W. Radlik, and W. Werner, J. Appl. Phys. 92, 5259 (2002).
-
(2002)
J. Appl. Phys.
, vol.92
, pp. 5259
-
-
Klauk, H.1
Halik, M.2
Zschieschang, U.3
Schmid, G.4
Radlik, W.5
Werner, W.6
-
9
-
-
0000686239
-
-
S. F. Nelson, Y.-Y. Lin, D. J. Gundlach, and T. N. Jackson, Appl. Phys. Lett. 72, 1854 (1998).
-
(1998)
Appl. Phys. Lett.
, vol.72
, pp. 1854
-
-
Nelson, S.F.1
Lin, Y.-Y.2
Gundlach, D.J.3
Jackson, T.N.4
-
11
-
-
0347329162
-
-
cond-mat/0306192
-
V. Podzorov, S. E. Sysoev, E. Loginova, V. M. Pudalov, and M. E. Gershenson, cond-mat/0306192.
-
-
-
Podzorov, V.1
Sysoev, S.E.2
Loginova, E.3
Pudalov, V.M.4
Gershenson, M.E.5
-
13
-
-
0347329160
-
-
cond-mat/0306206
-
J. Takeya, C. Goldmann, B. Batlogg, S. Haas, K. P. Pernstich, and B. Ketterer, cond-mat/0306206.
-
-
-
Takeya, J.1
Goldmann, C.2
Batlogg, B.3
Haas, S.4
Pernstich, K.P.5
Ketterer, B.6
-
14
-
-
0037120219
-
-
M. Ichikawa, H. Yanagi, Y. Shimizu, S. Hotta, N. Suganuma, T. Koyama, and Y. Taniguchi, Adv. Mater. (Weinheim, Ger.) 12, 1272 (2002).
-
(2002)
Adv. Mater. (Weinheim, Ger.)
, vol.14
, pp. 1272
-
-
Ichikawa, M.1
Yanagi, H.2
Shimizu, Y.3
Hotta, S.4
Suganuma, N.5
Koyama, T.6
Taniguchi, Y.7
-
15
-
-
0346698716
-
-
note
-
A similar technique has been used for crystals of different molecules, see Refs. 13 and 14.
-
-
-
-
16
-
-
0032474156
-
-
R. A. Laudise, Ch. Kloc, P. G. Simpkins, and T. Siegrist, J. Cryst. Growth 187, 449 (1998).
-
(1998)
J. Cryst. Growth
, vol.187
, pp. 449
-
-
Laudise, R.A.1
Kloc, Ch.2
Simpkins, P.G.3
Siegrist, T.4
-
17
-
-
0346067917
-
-
note
-
Without RIE cleaning we observe a large spread in mobilities, which are on average much lower than the mobility of FETs made on RIE cleaned substrates. Additionally, we find much larger hysteresis in the electrical measurements and a large negative threshold voltage.
-
-
-
-
18
-
-
0032050271
-
-
J. Vrijmoeth, R. W. Stok, R. Veldman, W. A. Schoonveld, and T. M. Klapwijk, J. Appl. Phys. 83, 3816 (1998).
-
(1998)
J. Appl. Phys.
, vol.83
, pp. 3816
-
-
Vrijmoeth, J.1
Stok, R.W.2
Veldman, R.3
Schoonveld, W.A.4
Klapwijk, T.M.5
-
19
-
-
79956038122
-
-
D. J. Gundlach, J. A. Nichols, L. Zhou, and T. N. Jackson, Appl. Phys. Lett. 80, 2925 (2002).
-
(2002)
Appl. Phys. Lett.
, vol.80
, pp. 2925
-
-
Gundlach, D.J.1
Nichols, J.A.2
Zhou, L.3
Jackson, T.N.4
-
20
-
-
0346698717
-
-
note
-
For holes, a positive threshold voltage implies conduction through the device in the absence of an applied gate voltage.
-
-
-
-
21
-
-
0031207689
-
-
Y.-Y. Lin, D. J. Gundlach, S. F. Nelson, and T. N. Jackson, IEEE Trans. Electron Devices 44, 1325 (1997).
-
(1997)
IEEE Trans. Electron Devices
, vol.44
, pp. 1325
-
-
Lin, Y.-Y.1
Gundlach, D.J.2
Nelson, S.F.3
Jackson, T.N.4
-
25
-
-
78649776867
-
-
N. Karl, K.-H. Kraft, J. Marktanner, M. Münch, F. Schatz, R. Stehle, and H.-M. Uhde, J. Vac. Sci. Technol. A 17, 2318 (1999).
-
(1999)
J. Vac. Sci. Technol. A
, vol.17
, pp. 2318
-
-
Karl, N.1
Kraft, K.-H.2
Marktanner, J.3
Münch, M.4
Schatz, F.5
Stehle, R.6
Uhde, H.-M.7
-
26
-
-
0346698714
-
-
cond-mat/0308391
-
R. W. I. de Boer, M. Jochemsen, T. M. Klapwijk, A. F. Morpurgo, J. Niemax, A. K. Tripathi, and J. Plaum, cond-mat/0308391.
-
-
-
De Boer, R.W.I.1
Jochemsen, M.2
Klapwijk, T.M.3
Morpurgo, A.F.4
Niemax, J.5
Tripathi, A.K.6
Plaum, J.7
-
28
-
-
0347959390
-
-
note
-
TOF experiments give a measure of the bulk mobility of charge carriers in the c direction of the crystal, whereas FET experiments probe the mobility of charge carriers at the crystal surface.
-
-
-
|