Ambipolar gate effect and low temperature magnetoresistance of ultrathin La0.8Ca0.2MnO3 films

Physical Review Letters

Volumn 94, Issue 3, 2005, Pages

  Eblen Zayas, M ^a   Bhattacharya, A ^a   Staley, N E ^a   Kobrinskii, A L ^a   Goldman, A M ^a  

^a University of Minnesota   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIPOLAR GATE EFFECT; JAHN-TELLER EFFECTS; METALLIC REGIONS; RESISTIVE TRANSITION;

ELECTRIC FIELDS; ELECTRON GAS; GROUND STATE; LANTHANUM COMPOUNDS; MAGNETIC FIELDS; ULTRATHIN FILMS;

MAGNETORESISTANCE;

EID: 18044379907     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.94.037204     Document Type: Article

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