Effects of geometry and doping on the operation of molecular transistors

Applied Physics Letters

Volumn 82, Issue 12, 2003, Pages 1938-1940

  Yang, Zhongqin ^a   Lang, Norton D ^b   Di Ventra, Massimiliano ^a  

^a VIRGINIA STATE UNIVERSITY   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); ELECTRODES; OXYGEN; RESONANT TUNNELING;

DIPOLE MOMENT;

TRANSISTORS;

EID: 0344511650     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1563737     Document Type: Article

References (20)

1. See, for example, K. S. Kuok and J. C. Ellenbogen, Materials Today 5, 28 (2002); A. Aviram, M. Ratner, and V. Mujica, Molecular Electronics 11 (NY Academy of Sciences, New York, 2002).
2. See, for example, K. S. Kuok and J. C. Ellenbogen, Materials Today 5, 28 (2002); A. Aviram, M. Ratner, and V. Mujica, Molecular Electronics 11 (NY Academy of Sciences, New York, 2002).
3. M. Di Ventra, S. T. Pantelides, and N. D. Lang, Appl. Phys. Lett. 76, 3448 (2000).
4. E. G. Emberly and G. Kirczenow, J. Appl. Phys. 88, 5280 (2000).
5. J. Park, A. N. Pasupathy, J. I. Goldsmith, C. Chang, Y. Yaish, J. R. Petta, M. Rinkoski, J. P. Sethna, H. D. Abruna, P. L. McEuen, and D. C. Ralph, Nature (London) 417, 722 (2002).
6. W. Liang, M. P. Shores, M. Bookrath, J. R. Long, and H. Park, Nature (London) 417, 725 (2002).
7. M. Di Ventra, S. T. Pantelides, and N. D. Lang, Phys. Rev. Lett. 84, 979 (2000).
8. N. D. Lang, Phys. Rev. B 52, 5335 (1995); ibid. 49, 2067 (1994); M. Di Ventra and N. D. Lang, ibid. 65, 045402 (2002); Z. Yang, A. Tackett, M. Di Ventra, ibid. 66, 041405 (2002).
9. N. D. Lang, Phys. Rev. B 52, 5335 (1995); ibid. 49, 2067 (1994); M. Di Ventra and N. D. Lang, ibid. 65, 045402 (2002); Z. Yang, A. Tackett, M. Di Ventra, ibid. 66, 041405 (2002).
10. N. D. Lang, Phys. Rev. B 52, 5335 (1995); ibid. 49, 2067 (1994); M. Di Ventra and N. D. Lang, ibid. 65, 045402 (2002); Z. Yang, A. Tackett, M. Di Ventra, ibid. 66, 041405 (2002).
11. N. D. Lang, Phys. Rev. B 52, 5335 (1995); ibid. 49, 2067 (1994); M. Di Ventra and N. D. Lang, ibid. 65, 045402 (2002); Z. Yang, A. Tackett, M. Di Ventra, ibid. 66, 041405 (2002).
12. M. Di Ventra, S. T. Pantelides, and N. D. Lang, Phys. Rev. Lett. 88, 046801 (2002).
13. Note that, due to the particular geometry, small changes in the current versus gate voltage curve are expected if the molecular plane is placed perpendicular to the capacitor disk.
14. R. A. Wolkow, G. P. Lopinski, and D. J. Moffatt, Surf. Sci. 416, L1107 (1998).
15. Examples of transistor-like behavior in molecules with intrinsic dipole moment can be found in S. N. Rashkeev, M. Di Ventra, and S. T. Pantelides, Phys. Rev. B 66, 033301 (2002) and N. D. Lang, ibid. 64, 235121 (2001).
16. Examples of transistor-like behavior in molecules with intrinsic dipole moment can be found in S. N. Rashkeev, M. Di Ventra, and S. T. Pantelides, Phys. Rev. B 66, 033301 (2002) and N. D. Lang, ibid. 64, 235121 (2001).
17. Note that the values of the resistance at resonant tunneling are 19.2 and 16.0 KΩ for the molecule/electrode system with and without the co-adsorbed oxygen, respectively. This indicates that the transmission probability of the transport channel is not unity at resonance.
18. N. D. Lang and Ph. Avouris (unpublished).
19. Note that the gate voltage at which resonant tunneling occurs is almost the same in the presence of the O atom even though the HOMO is only 0.1 eV from the left Fermi level, compared to almost 1 eV of energy difference between the LUMO and the left Fermi level in the case without the O atom. The difference can be ascribed to the different screening introduced by the presence of the O atom.
20. We also tested that this effect is reduced by increasing the distance between the O atom and the S atom while keeping the O/electrode distance constant.