Examining the screening limit of field effect devices via the metal-insulator transition

Applied Physics Letters

Volumn 86, Issue 14, 2005, Pages 1-3

  Hong, X ^a   Posadas, A ^a   Ahn, C H ^a  

^a Yale University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT DEVICES; METAL-INSULATOR TRANSITION; METALLICITY; POLARIZATION FIELDS;

ATTENUATION; CONCENTRATION (PROCESS); ELECTRIC FIELD EFFECTS; HIGH TEMPERATURE EFFECTS; MAGNETORESISTANCE; MOS DEVICES; POLARIZATION; SCREENING;

FIELD EFFECT SEMICONDUCTOR DEVICES;

EID: 17444378920     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1897076     Document Type: Article

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