Interface-mediated pairing in field effect devices

Physical Review B - Condensed Matter and Materials Physics

Volumn 71, Issue 10, 2005, Pages

  Koerting, V ^a   Yuan, Qingshan ^a,b,c   Hirschfeld, P J ^a,d   Kopp, T ^a   Mannhart, J ^a  

^a UNIVERSITY OF AUGSBURG   (Germany)

^b UNIVERSITY OF HOUSTON   (United States)

^c TONGJI UNIVERSITY   (China)

^d University of Florida ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARTICLE; DENSITY; DEVICE; ELECTRIC FIELD; ELECTRIC POTENTIAL; ELECTRON; ENERGY; FILM; GAS; MODEL; MOLECULAR INTERACTION; POLARIZATION; SUPERCONDUCTOR; TEMPERATURE DEPENDENCE; THERMAL ANALYSIS;

EID: 20344369275     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.71.104510     Document Type: Article

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