Gated four-probe measurements on pentacene thin-film transistors: Contact resistance as a function of gate voltage and temperature

Journal of Applied Physics

Volumn 96, Issue 12, 2004, Pages 7312-7324

  Pesavento, Paul V ^a   Chesterfield, Reid J ^a   Newman, Christopher R ^a   Frisble, C Daniel ^a  

^a UNIVERSITY OF MINNESOTA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT RESISTANCE; GATE VOLTAGE; GATED FOUR-PROBE MEASUREMENTS; ORGANIC THIN FILM TRANSISTORS (OTFT); PENTACENE;

ALUMINA; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTRODES; METALLURGY; SEMICONDUCTOR DOPING; SILICA; THERMAL EFFECTS;

THIN FILM TRANSISTORS;

EID: 11044237704     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1806533     Document Type: Article

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