Field-effect transistors on rubrene single crystals with parylene gate insulator

Applied Physics Letters

Volumn 82, Issue 11, 2003, Pages 1739-1741

  Podzorov, V ^a   Pudalov, V M ^a,b   Gershenson, M E ^a  

^a RUTGERS UNIVERSITY   (United States)

^b LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; EVAPORATION; FIELD EFFECT TRANSISTORS; X RAY ANALYSIS;

FIELD-EFFECT MOBILITY;

SINGLE CRYSTALS;

EID: 0037451354     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1560869     Document Type: Article

References (14)

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9. -3), and the carrier injection from thin-film Ag contacts into the bulk occurs at low bias voltages.
10. The parylene coatings are widely used in the packaging applications; the deposition equipment for parylene is inexpensive and easy to build (see, e.g., Parylene Conformal Coatings Specifications and Properties, Technical notes, Specialties Coating Systems).
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13. The resistance of the Schottky barriers at a metalorganics interface could be very large, especially at low temperatures.
14. 8 = 0. To pinchoff the channel, a positive gate voltage should be applied.