Single-crystal organic field effect transistors with the hole mobility ∼8 cm2/Vs

Applied Physics Letters

Volumn 83, Issue 17, 2003, Pages 3504-3506

  Podzorov, V ^a   Sysoev, S E ^a   Loginova, E ^a   Pudalov, V M ^a,b   Gershenson, M E ^a  

^a RUTGERS UNIVERSITY   (United States)

^b LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CAPACITANCE; ELECTRIC INSULATORS; ELECTRIC POTENTIAL; HOLE MOBILITY; HYDROGENATION; SINGLE CRYSTALS; THIN FILMS;

ORGANIC FIELD EFFECT TRANSISTORS (OFET);

FIELD EFFECT TRANSISTORS;

EID: 0242666862     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1622799     Document Type: Article

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26. SD.