Molecular random access memory cell

Applied Physics Letters

Volumn 78, Issue 23, 2001, Pages 3735-3737

  Reed, M A ^a   Chen, J ^a,c   Rawlett, A M ^b,d   Price, D W ^b   Tour, J M ^b  

^a YALE UNIVERSITY   (United States)

^b RICE UNIVERSITY   (United States)

^c IBM   (United States)

^d MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035806213     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1377042     Document Type: Article

References (10)

1. S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. F. Crabbe, and K. Chan, Appl. Phys. Lett. 68, 1377 (1996).
2. A single electron memory operating at 4 K was demonstrated in N. J. Stome and H. Ahme, IEEE Electron Device Lett. 20, 583 (1999).
3. R. S. Potember, T. O. Pochler, and D. O. Cowan, Appl. Phys. Lett. 34, 405 (1979).
4. R. S. Potember, T. O. Poehler, D. O. Cowan, and A. N. Bloch, in Electrical Switching and Memory Phenomena in Semiconducting Organic Charge-transfer Complexes. The Physics and Chemistry of Low-Dimensional Solids, edited by L. Alcacer (Reidel, Dordrecht, 1980), p. 419.
5. L. P. Ma, Y. L. Song, H. J. Gao, W. B. Zhao, H. Y. Chen, Z. Q. Xue, and S. J. Pang, Appl. Phys. Lett. 69, 3752 (1996).
6. C. Zhou, M. R. Deshpande, M. A. Reed, and J. M. Tour, Appl. Phys. Lett. 71, 611 (1997).
7. J. Chen, M. A. Reed, A. M. Rawlett, and J. M. Tour, Science 286, 1550 (1999).
8. The characteristics discussed here are for the low bias regime high temperature regime.
9. J. Chen, L. C. Calvet, M. A. Reed, D. W. Carr, D. S. Grubisha, and D. W. Bennett, Chem. Phys. Lett. 313, 741 (1999).
10. H. J. Gao, K. Sohlberg, Z. Q. Xue, H. Y. Chen, S. M. Hou, L. P. Ma, X. W. Fang, S. J. Pang, and S. J. Pennycook, Phys. Rev. Lett. 84, 1780 (2000).