Electronically configurable molecular-based logic gates

Science

Volumn 285, Issue 5426, 1999, Pages 391-394

  Collier, C P ^a   Wong, E W ^a   Belohradsky M ^a   Raymo, F M ^a   Stoddart, J F ^a   Kuekes, P J ^b   Williams, R S ^b   Heath, J R ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRODES; MONOLAYERS; SEMICONDUCTOR SWITCHES;

ELECTRONICALLY CONFIGURABLE MOLECULAR-BASED LOGIC GATES; REDOX-ACTIVE ROTAXANES;

LOGIC GATES;

ALUMINUM; BIPYRIDINE DERIVATIVE; BIS 4 PHENYLENE 34 CROWN 10; CROWN ETHER; ROTAXANE; SILICON DIOXIDE; TITANIUM; UNCLASSIFIED DRUG;

ARTICLE; COMPUTER; ELECTRIC POTENTIAL; ELECTRODE; ELECTRONICS; OXIDATION REDUCTION REACTION; PRIORITY JOURNAL; SEMICONDUCTOR;

EID: 0033575366     PISSN: 00368075     EISSN: None     Source Type: Journal    
DOI: 10.1126/science.285.5426.391     Document Type: Article

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22. This work was supported by the Office of Naval Research (contract N00014-98-1-0422), the NSF-GOALI program, and Defense Advance Research Projects Agency.