Bias-dependent generation and quenching of defects in pentacene

Physical Review Letters

Volumn 93, Issue 7, 2004, Pages

  Lang, D V ^a,b   Chi, X ^b   Siegrist, T ^c   Sergent, A M ^c   Ramirez, A P ^b,c  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b Och Spine at New York Presbyterian Hospitals   (United States)

^c LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ASYMPTOTIC STABILITY; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIFFRACTOMETERS; ELECTRIC SPACE CHARGE; EVAPORATORS; LIGHT POLARIZATION; MOLECULAR DYNAMICS; MONOCHROMATORS; QUENCHING; SINGLE CRYSTALS; THIN FILM TRANSISTORS; THIN FILMS;

DECAY RATES; PENTACENE; PHOTOEXCITATION; SPACE-CHARGE-LIMITED CURRENT (SCLC);

SEMICONDUCTING ORGANIC COMPOUNDS;

EID: 19444377967     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.93.076601     Document Type: Article

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