Temperature-dependent contact resistances in high-quality polymer field-effect transistors

Applied Physics Letters

Volumn 84, Issue 3, 2004, Pages 443-445

  Hamadani, B H ^a   Natelson, D ^a  

^a RICE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL RESISTANCES; CONTACT RESISTANCES; GATE VOLTAGES;

ACTIVATION ENERGY; ATOMIC FORCE MICROSCOPY; CARRIER MOBILITY; CURRENT DENSITY; ELECTRIC RESISTANCE; ELECTRON BEAM LITHOGRAPHY; EXTRAPOLATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING POLYMERS; SEMICONDUCTOR DOPING; THERMAL EFFECTS; TRANSPORT PROPERTIES;

FIELD EFFECT TRANSISTORS;

EID: 1242287906     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1639945     Document Type: Article

References (21)

1. C. D. Dimitrakopoulos and D. J. Mascaro, IBM J. Res. Dev. 45, 11 (2001).
2. J. C. Scott, J. Vac. Sci. Technol. A 21, 521 (2003).
3. G. Horowitz, R. Hajlaoui, D. Fichou, and A. El Kassmi, J. Appl. Phys. 85, 3202 (1999).
4. R. A. Street and A. Salleo, Appl. Phys. Lett. 81, 2887 (2002).
5. K. Seshadri and C. D. Frisbie, Appl. Phys. Lett. 78, 993 (2001).
6. L. Bürgi, H. Sirringhaus, and R. H. Friend, Appl. Phys. Lett. 80, 2913 (2002).
7. H. Klauk, G. Schmid, W. Radlik, W. Weber, L. Zhou, C. D. Sheraw, J. A. Nichols, and T. N. Jackson, Solid-State Electron. 47, 297 (2003).
8. P. V. Necludiov, M. S. Shur, D. J. Gundlach, and T. N. Jackson, Solid-State Electron. 47, 259 (2003).
9. J. Zaumseil, K. W. Baldwin, and J. A. Rogers, J. Appl. Phys. 93, 6117 (2003).
10. E. J. Meijer, G. H. Gelinck, E. van Veenendaal, B.-H. Huisman, D. M. de Leeuw, and T. M. Klapwijk, Appl. Phys. Lett. 82, 4576 (2003).
11. M. Abkowitz, S. Facci, and J. Rehm, J. Appl. Phys. 83, 2670 (1998).
12. V. I. Arkhipov, E. V. Emelianova, Y. H. Tak, and H. Bässler, J. Appl. Phys. 84, 848 (1998).
13. J. C. Scott and G. G. Malliaras, Chem. Phys. Lett. 299, 115 (1999).
14. Y. Shen, M. W. Klein, D. B. Jacobs, J. C. Scott, and G. G. Malliaras, Phys. Rev. Lett. 86, 3867 (2001).
15. Sigma-Aldrich Inc., St. Louis, MO.
16. Z. Bao, A. Dodabalapur, and A. J. Lovinger, Appl. Phys. Lett. 69, 4108 (1996).
17. H. Sirringhaus, N. Tessler, and R. H. Friend, Science 280, 1741 (1998).
18. H. Sirringhaus, P. J. Brown, R. H. Friend, M. M. Nielsen, K. Bechgaard, B. M. W. Langveld-Voss, A. J. H. Spiering, R. A. J. Janssen, E. W. Meijer, P. Herwig, and D. M. de Leeuw, Nature (London) 401, 685 (1999).
19. A. N. Aleshin, H. Sandberg, and H. Stubb, Synth. Met. 121, 1449 (2001).
20. E. J. Meijer, C. Tanase, P. W. M. Blom, E. van Veenendaal, B.-H. Huisman, D. M. de Leeuw, and T. M. Klapwijk, Appl. Phys. Lett. 80, 3838 (2002).
21. P. R. Emtage and J. J. O'Dwyer, Phys. Rev. Lett. 16, 356 (1966).