Interface state density at implanted 6H SiC/SiO2 MOS structures

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 861-864

  Bassler, M ^a   Afanas'ev, V V ^b   Pensl, G ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Interface State Density; Ion Implantation; MOS

Indexed keywords

ALUMINUM; BORON; ELECTRONIC DENSITY OF STATES; INTERFACES (MATERIALS); ION IMPLANTATION; MOS DEVICES; NITROGEN; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SILICA; SILICON CARBIDE; THERMOOXIDATION;

IMPLANTED DOPANTS; INTERFACE STATE DENSITY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 11644310529     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

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