Fundamentals of SiC-based device processing

MRS Bulletin

Volumn 22, Issue 3, 1997, Pages 42-47

  Melloch, M R ^a   Cooper Jr , J A ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CHARGE COUPLED DEVICES; CMOS INTEGRATED CIRCUITS; GATES (TRANSISTOR); ION IMPLANTATION; MOSFET DEVICES; OXIDATION; REACTIVE ION ETCHING; SEMICONDUCTOR DEVICE MANUFACTURE;

CAPACITANCE VOLTAGE CHARACTERISTIC; METAL CONTACTS; POLYSILICON GATES; SURFACE STATE DENSITY;

SILICON CARBIDE;

EID: 0031100073     PISSN: 08837694     EISSN: None     Source Type: Journal    
DOI: 10.1557/s0883769400032759     Document Type: Article

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