Effect of substrate orientation and crystal anisotropy on the thermally oxidized SiO2/SiC interface

Journal of Applied Physics

Volumn 79, Issue 6, 1996, Pages 3042-3045

  Shenoy, J N ^a   Das, M K ^a   Cooper Jr , J A ^a   Melloch, M R ^a   Palmour, J W ^b  

^a PURDUE UNIVERSITY   (United States)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000004718     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361244     Document Type: Article

References (24)

1. P. G. Neudeck, J. Electron Mater. 24, 283 (1995).
2. Cree Research, Inc., Durham, NC 27713.
3. J. W. Palmour, R. F. Davis, H. S. Kong, S. F. Corcoran, and D. F. Griffis, J. Electrochem. Soc. 136, 502 (1989).
4. T. Ouisse, N. Becourt, C. Jaussad, and F. Templier, J. Appl. Phys. 75, 604 (1994).
5. J. N. Shenoy, G. L. Chindalore, M. R. Melloch, J. A. Cooper, Jr., J. W. Palmour, and K. G. Irvine, J. Electron. Mater. 24, 303 (1995).
6. W. Xie, J. A. Cooper, Jr., and M. R. Melloch, IEEE Trans. Electron Device Lett. 15, 455 (1994).
7. D. M. Brown, M. Chezzo, J. Kretchmer, V. Krisnamurthy, G. Michon, and G. Gati, presented at the Second International High Temperature Electronic Conference, 1994 (unpublished).
8. D. B. Slater, Jr., L. A. Lipkin, G. M. Johnson, A. V. Suvorov, and J. W. Palmour, 53rd Device Research Conference, Charlottesville, VA, 1995 (unpublished).
9. R. R. Siergiej, A. K. Agarwal, W. E. Wagner III, M. H. White, C. D. Brandt, M. C. Driver, and R. H. Hopkins, in Ref. 8.
10. M. E. Lin, S. Strite, A. Agarwal, A. Salvador, G. L. Zhou, M. Terayuchi, A. Rockett, and H. Morkoc, Appl. Phys. Lett. 62, 702 (1993).
11. S. Adachi, M. Mohri, and T. Yamashina, Surf. Sci. 161, 479 (1985).
12. M. Bhatnagar and B. J. Baliga, IEEE Trans. Electron Devices 40, 645 (1993).
13. J. W. Palmour and L. A. Lipkin, in Ref. 7. p. XI-2.
14. S. T. Sheppard, M. R. Melloch, and J. A. Cooper, Jr., IEEE Trans. Electron Devices 41, 1257 (1994).
15. R. Castagne and A. Vapaille, Surf. Sci. 28, 557 (1971).
16. E. H. Nicollian and A. Goetzberger, The Bell Syst. Tech. J. 46, 1055 (1967).
17. Z. Zheng, R. E. Tressler, and K. E. Spear, J. Electrochem. Soc. 137, 854 (1990).
18. J. A. Powers and G. A. Somorjai, Surf. Sci. 244, 39 (1991).
19. B. Hornetz, H.-J. Michel, and J. Halbritter, J. Mater. Res. 9, 3088 (1994).
20. E. Arnold, J. Ladell, and G. Abowitz, Appl. Phys. Lett. 13, 413 (1968).
21. P. Friedrichs, E. P. Burte, and R. Schorner, Appl. Phys. Lett. 65, 1665 (1994).
22. D. Alok, P. K. McLarty, and B. J. Baliga, Appl. Phys. Lett. 65, 2177 (1994).
23. Z. A. Weinberg, Solid State Electron. 20, 11 (1977).
24. C. Y. Kwok, A. Wiliams, M. Gross, E. Gauja. and S. O. Kong, IEEE Electron Device Lett. 15, 513 (1994).