Time-dependent-dielectric-breakdown measurements of thermal oxides on N-Type 6H-SiC

IEEE Transactions on Electron Devices

Volumn 46, Issue 3, 1999, Pages 520-524

  Maranowski, Michaile Mathur ^a,c   Cooper Jr , James A ^b  

^a IEEE   (United States)

^b HEWLETT PACKARD COMPANY   (United States)

^c PURDUE UNIVERSITY   (United States)

Author keywords

MOS devices; Reliability; Semiconductorinsulator interfaces

Indexed keywords

DIELECTRIC PROPERTIES OF SOLIDS; ELECTRIC BREAKDOWN OF SOLIDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE; THERMOOXIDATION;

MEAN-TO-TIME-FAILURE (MTTF); TIME-DEPENDENT-DIELECTRIC-BREAKDOWN (TDDB) MEASUREMENT;

MOS CAPACITORS;

EID: 0033099620     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.748871     Document Type: Article

References (18)

1. B.J. Baliga, "Power semiconductor device figure of merit for highfrequency applications," IEEE Electron Device Lett., vol. 10, p. 455, 1989.
2. K. Moore and R. J. Trew, "Radio-frequency power transistors based on 6H- and 4H-S1C," MRS Bull, vol. 22, p. 50, 1997.
3. R.R. Siergiej, R. C. Clarke, A. K. Agarwal, C. D. Brandt, A. A. Burk, Jr., A. Morse, and P. A. Orphanos, "High power 4H-S1C static induction transistors," in 1EDM Tech. Dig., 1995, p. 353.
4. J.N. Shenoy, G. L. Chindalore, M. R. Melloch, J. A. Cooper, Jr., J. W. Palmour, and K. G. Irvine, "Characterization and optimization of the SiC>2/SiC metal-oxide semiconductor interface," J. Electron. Mater., vol. 24, p. 303, 1995.
5. L.A. Lipkin and J. W. Palmour, "Improved oxidation procedures for reduced SiO2/SiC defects," J. Electron. Mater., vol. 25, p. 909, 1996.
6. M.K. Das, J. A. Cooper, Jr., and M. R. Melloch, "Effect of epilayer characteristics and processing conditions on the thermally oxidized SiO2/SiC interface," J. Electron. Mater., vol. 27, p. 353, 1998.
7. J.W. Palmour, H. S. Kong, and R. F. Davis, "Characterization of device parameters in high-temperature metal-oxide-semiconductor field-effect transistors in /3-SiC thin films," J. Appl. Phys., vol. 64, p. 2168, 1988.
8. S.T. Sheppard, M. R. Melloch, and J. A. Cooper, Jr., "Characteristics of inversion-channel and buried-channel MOS devices in 6H-S1C," IEEE Trans. Electron Devices, vol. 41, p. 1257, 1994.
9. W. Xie, J. A. Cooper, Jr., and M. R. Melloch, "Monolithic NMOS digital integrated circuits in 6H-S1C," IEEE Electron Device Lett., vol. 15, p. 455, 1994.
10. D.M. Brown, M. Ghezzo, J. Kretchmer, V. Krishnamurthy, G. Michon, and G. Gati, in Trans. 2nd Int. High Temperature Electron. Conf., Charlotte, NC, 1994, p. XI-17.
11. D.B. Slater, G. M. Johnson, L. A. Lipkin, A. V. Suvorov, and J. W. Palmour, "Demonstration of a 6H-S1C CMOS technology," in Trans. 3rd Int. High Temperature Electron. Conf., Albuquerque, NM, 1996, p. XVI-27.
12. S. Ryu, K. T. Kornegay, J. A. Cooper, Jr., and M. R. Melloch, "Digital CMOS IC's in 6H-S1C operating on a 5 V power supply," IEEE Trans. Electron Devices, vol. 45, p. 45, Jan. 1998.
13. J.W. Palmour, J. A. Edmond, H. S. Kong, and C. H. Carter, Jr., "6Hsilicon carbide power devices for aerospace applications," in Proc. 28th Intersocial Energy Conversion Eng. Conf., Charlotte, NC, 1994, p. XI-3.
14. J.N. Shenoy, J. A. Cooper, Jr., and M. R. Melloch, "High-voltage double-implanted power MOSFET's in 6H-S1C," IEEE Electron Device Lett., vol. 18, p. 93, 1997.
15. A.K. Agarwal, J. B. Casady, L. B. Rowland, W. F. Valek, and C. D. Brandt, "1400 V 4H-S1C power MOSFET's," Silicon Carbide, IllNitrides and Related Materials, G. Pensl, H. Morkoc, B. Monemar, and E. Janzen, Eds. Enfield, NH: Trans. Tech, 1998, p. 989.
16. J. Spitz, M. R. Melloch, J. A. Cooper, Jr., and M. A. Capano, "Highvoltage (2.6 kV) lateral DMOSFET's in 4H-SiC," IEEE Electron Device Lett., vol. 19, p. 100, 1998.
17. L.A. Lipkin, J. W. Palmour, and J. S. Suehle, "P-Type SiC MOS reliability with improved oxidation procedures and aluminum or boron p-type dopants," in Trans. 3rd Int. High Temperature Electron. Conf., Albuquerque, NM, 1996, p. XIV-15.
18. J. Prendergast, J. Suehle, P. Chaparala, E. Murphy, and M. Stephenson, "TDDB characterization of thin SiU2 films with bimodal failure populations," in Proc. Int. Reliab. Phys. Symp., 1995., vol. 23, p. 124.