Photoemission of the SiO2-SiC heterointerface

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1776-1784

  O'brien, M L ^a   Koitzsch, C ^a   Nemanich, R J ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; EMISSION SPECTROSCOPY; INTERFACES (MATERIALS); OXIDATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICA; SILICON CARBIDE; ULTRAVIOLET SPECTROSCOPY;

BAND BENDING; ULTRAVIOLET PHOTOEMISSION SPECTROSCOPY; VALENCE BANDS;

HETEROJUNCTIONS;

EID: 0034350482     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591471     Document Type: Article

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