Silicon carbide technology in new era

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 3-8

  Matsunami, H ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

4H SiC MOSFETs; Bulk growth; Channel mobility; Device processes; Epitaxial growth; SiC technology

Indexed keywords

CARRIER MOBILITY; EPITAXIAL GROWTH; MOSFET DEVICES; SWITCHING SYSTEMS; SILICON CARBIDE;

CHANNEL MOBILITY; POWER SWITCHING DEVICES; SILICON CARBIDE TECHNOLOGY; 4H-SIC MOSFETS; BULK CRYSTAL GROWTH; BULK GROWTH;

SILICON CARBIDE; MOSFET DEVICES;

EID: 4244038044     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.3     Document Type: Article

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