HfO2-based insulating stacks on 4H-SiC(0001)

Applied Physics Letters

Volumn 82, Issue 6, 2003, Pages 922-924

  Afanas'ev, V V ^a   Stesmans, A ^a   Chen, F ^b   Campbell, S A ^b   Smith, R ^c  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b UNIVERSITY OF MINNESOTA   (United States)

^c University of Minnesota   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRIC INSULATING MATERIALS; PERMITTIVITY; SILICA; SILICON CARBIDE; ULTRATHIN FILMS;

ELECTRON SATURATION VELOCITY;

HAFNIUM COMPOUNDS;

EID: 0037428807     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1538310     Document Type: Article

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