6H-SiC MOS capacitors on sloped surfaces: Realisation, characterisation and electrical results

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 1029-1032

  Lanois, F ^a   Planson, D ^a   Lassagne, P ^b   Raynaud, C ^a   Bano, E ^a  

^a CNRS   (France)

^b CEA LETI   (France)

Author keywords

AFM Capacitance Measurements; MOS Capacitors; Plasma Etching; Trench Structure; XPS

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE MEASUREMENT; INTERFACES (MATERIALS); MOS DEVICES; PLASMA ETCHING; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON CARBIDE; SURFACE ROUGHNESS; X RAY PHOTOELECTRON SPECTROSCOPY;

TRENCH SURFACES;

CAPACITORS;

EID: 0031674155     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.1029     Document Type: Article

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