Shallow states at SiO2/4H-SiC interface on (112̄0) and (0001) faces

Applied Physics Letters

Volumn 81, Issue 2, 2002, Pages 301-303

  Yano, Hiroshi ^a   Kimoto, Tsunenobu ^a   Matsunami, Hiroyuki ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTANCE METHOD; CONDUCTION BAND EDGE; ENERGY DISTRIBUTIONS; FLAT-BAND VOLTAGE SHIFT; FUNCTION OF FREQUENCY; HIGH FREQUENCY HF; HIGH-FREQUENCY C-V; INTERFACE STATE; INTERFACE STATE DENSITY; METAL OXIDE SEMICONDUCTOR; PARALLEL CONDUCTANCE; ROOM TEMPERATURE; SHALLOW STATE; WET OXIDATION;

DIELECTRIC DEVICES; SILICON CARBIDE;

MOS CAPACITORS;

EID: 79956038405     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1492313     Document Type: Article

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