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Volumn 80, Issue 1, 2002, Pages 76-78
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Molecular-beam epitaxial growth of insulating AlN on surface-controlled 6H-SiC substrate by HCl gas etching
a
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Author keywords
[No Author keywords available]
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Indexed keywords
ALN;
ALN LAYERS;
ATOMICALLY FLAT SURFACE;
HCL GAS;
MBE GROWTH;
PRETREATMENT METHODS;
SIC SUBSTRATES;
SURFACE POLISHING;
THERMAL CLEANING;
EPITAXIAL GROWTH;
ETCHING;
INSULATION;
MOLECULAR BEAMS;
NITROGEN;
NITROGEN PLASMA;
POLISHING;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON CARBIDE;
SURFACE DEFECTS;
SUBSTRATES;
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EID: 79957933731
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1428620 Document Type: Article |
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Times cited : (31)
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References (8)
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