Study of interface state density and effective oxide charge in post-metallization annealed SiO2/SiC structures

IEEE Transactions on Electron Devices

Volumn 46, Issue 3, 1999, Pages 511-519

  Campi, John ^a   Shi, Yan ^a   Luo, Yanbin ^b   Yan, Feng ^c   Zhao, Jian H ^c  

^a IEEE   (United States)

^b RUTGERS UNIVERSITY   (United States)

^c SARNOFF CORPORATION   (United States)

Author keywords

Interface defects; Mosfet's; Oxide charge; SiC

Indexed keywords

ANNEALING; CAPACITANCE; CRYSTAL DEFECTS; ELECTRIC POTENTIAL; ENERGY GAP; METALLIZING; MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON CARBIDE; THERMAL EFFECTS;

INTERFACE STATE DENSITY; OXIDE CHARGES;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0033097598     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.748870     Document Type: Article

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