Temperature dependence of Fowler-Nordheim current in 6H- and 4H-SiC MOS capacitors

IEEE Electron Device Letters

Volumn 18, Issue 12, 1997, Pages 592-594

  Agarwal, Anant K ^a   Seshadri, Suresh ^a   Rowland, Larry B ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRONS; MOSFET DEVICES; THYRISTORS;

FOWLER-NORDHEIM CURRENT; GATE OXIDES; TEMPERATURE DEPENDENCE;

MOS DEVICES;

EID: 0031333557     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.644081     Document Type: Article

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