Critical review of chemical vapor-deposited (CVD) diamond for electronic applications

Critical Reviews in Solid State and Materials Sciences

Volumn 25, Issue 3, 2000, Pages 163-277

  Railkar, T A ^a,b   Kang, W P ^c   Windischmann, Henry ^d   Malshe, A P ^a,b   Naseem, H A ^a,b   Davidson, J L ^c   Brown, W D ^a,b  

^a UNIVERSITY OF ARKANSAS   (United States)

^b 3202 Bell Engineering Center   (United States)

^c VANDERBILT UNIVERSITY   (United States)

^d SAINT GOBAIN RECHERCHE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL POLISHING; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; CRYSTAL STRUCTURE; ELECTRONICS PACKAGING; FULLERENES; GRAPHITE; INTEGRATED OPTOELECTRONICS; NUCLEATION; REACTIVE ION ETCHING; SYNTHESIS (CHEMICAL); THERMAL CONDUCTIVITY;

CARBON BONDING; DIAMOND LIKE CARBON; ION BEAM POLISHING; LASER DRILLING; LASER POLISHING; MICROWAVE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THERMAL CONDUCTIVITY MEASUREMENT; THERMOCHEMICAL POLISHING;

SEMICONDUCTING DIAMONDS;

EID: 0033696480     PISSN: 10408436     EISSN: None     Source Type: Journal    
DOI: 10.1080/10408430008951119     Document Type: Article

References (395)

1. F. P. Bundy, H. T. Hall, H. M. Strong, and R. H. Wentort, Jr., Nature (London) 176:51 (1955).
2. W. G. Eversole, U.S. Patent No. 3030188. April 1962 (1962).
3. http://www.crystallume.com/properties.html
4. J. Robertson, Advances in Physics, D. Sherrington, Ed., 35(4):317 (1986).
5. Ralph W. G. Wykoff, Crystal Structures, 2nd edition, Interscience Publishers, New York, p. 26 (1963).
6. C. Y. Fong and B. M. Klein, Diamond: Electronic Properties and Applications, p. 9, Lawrence S. Pan and Don R. Kania, Eds. Kluwer Academic Publishers, Boston (1995).
7. M. T. Yin and M. L. Cohen, Phys. Rev., B24:6121 (1981).
8. Rahul Sen, R. Sumathy, and C. N. 'R. Rao, J. Mater. Res., 10:2531 (1995).
9. S. Neuville and A. Matthews, MRS Bull., 22:22 (1997).
10. D. R. McKenzie, Rep. Prog. Phys., 59:1611 (1996).
11. F. M. Kimock and D. J. Knapp, Surf. Coat. Technol., 56:273 (1993).
12. Xiao-Ming He, S. T. Lee, I. Bello, A. C. Cheung, and C. S. Lee, J. Mater. Res., 14:1055 (1999).
13. Kungl. Vetenskapsakademien (The Royal Swedish Academy of Sciences) web page, at http:// www.nobel.se
14. K. Lonsdale, Am. Miner, 56:333 (1971).
15. Yu I. Sozin, Yu. I. Nikitin, and V. G. Poltoratskii, Sverkhtverdye Materialy, 8:12 (1986).
16. C. B. Collins, F. Davanloo, D. R. Jander, T. J.' Lee, H. Park, and J. H. You, J. Appl. Phys., 69:7862 (1991).
17. C. B. Collins, F. Davanloo, D. R. Jander, T. J. Lee, J. H. You, H. Park, J. C. Pivin, K. Glejbøl and A. R. Thölén, J. Appl. Phys., 72:239 (1992).
18. C. B. Collins, F. Davanloo, D. R. Jander, T. J. Lee, J. H. You, and H. Park, Diamond Films Technol., 2:25 (1992).
19. F. Davanloo, J. H. You, and C. B. Collins, J. Mater. Res., 10:2548 (1995).
20. C. B. Collins, F. Davanloo, J. H. You, and H. Park, Laser Applications, A. A. Mak, Ed., Proc. SPIE, 2097:129 (1994).
21. B. A. Fox, M. L. Hartsell, D. M. Malta, H. A. Wynands, G. J. Tessmer, and D. L. Dreifus, Mat. Res. Soc. Symp. Proc., 416:319 (1996).
22. E. Conwell and V. F. Wiesskopf, Phys. Rev., 77:388 (1950).
23. A. T. Collins and E. C. Lightowlers, The Properties of Diamond, J. E. Fields, Ed., Academic Press, London, p. 79 (1979).
24. S. Han, G. Rodriguez, A. Taylor, M. A. Plano, M. D. Moyer, M. A. Moreno, L. S. Pan, D. B. Black, H. Burdette, J. W. Ager III, and A. Chen, Mat. Res. Soc. Symp. Proc., 416:343 (1996).
25. C. J. Chu, M. P. D'Evelyn, R. H. Hauge, and J. L. Margrave, J. Appl. Phys., 70:1695 (1991).
26. P. K. Bachmann, D. Leers, and H. Lydtin, Diamond and Related Materials, 1:1 (1991).
27. A. Inspektor, Y. Liou, T. McKenna, and R. Meisser, Surf. Coat. Technol., 39/40:211 (1989).
28. Y. Liou, R. Weimer, D. Knight, and R. Messier, Appl. Phys. Lett., 56:437 (1990).
29. R. A. Rudder, J. B. Posthill, G. C. Hudson, D. P. Malta, R. E. Thomas, R. J. Markunas, T. P. Humphreys, and R. J. Nemanich, Mater Res. Soc. Proc., 242:23 (1992).
30. P. K. Bachmann, General Aspects of CVD Growth of Diamond and Their Correlation, Properties and Growth of Diamond, G. Davies, Ed., Data Reviews Series No. 9, INSPEC, London 364 (1994).
31. S. Matsumuto, Y. Sato, M. Tsatsumi, and N. Sekata, J. Mater Sci., 17:3106 (1982).
32. A. R. Badzian, in Advances in X-Ray Analysis, C. S. Barrett, J. V. Grefrich, R. Kenkins, J. C. Russ, J. W. Richardson, and P. K. Predeck, Eds., Plenum Press, New York, 31:113 (1988).
33. T. R. Anthony, Methods of Diamond Making, Diamond and diamond-like films and coatings, NATO Advanced Study Institute on Diamond and Diamond-like Films, R. E. Clausing, L. L. Horton, J. C. Agnus, and P. Koidl, Eds., Plenum Press, New York, 555 (1991).
34. M. Tomellini, R. Polini, and V. Sessa, J. Appl. Phys., 70:7573 (1991).
35. J. Robertson, J. Gerber, S. Sattel, M. Weiler, K. Jung, and H. Ehrhardt, Appl. Phys. Lett., 66:3287 (1995).
36. M. Tsuda, M. Nakajima, and S. Oikawa, Jpn. J. Appl. Phys., 26:L527 (1989).
37. B. Lewis and J. C. Anderson, Nucleation and Growth of Thin Films, Academic Press, New York (1978).
38. S. Soderberg, A. Gerendas, and M. Sjostrand, Vacuum, 41:1317 (1990).
39. J. Rankin, R. E. Boekenhauer, R. Csencsits, Y. Shigesato, M. W. Jacobson, and B. W. Sheldon, J. Mater. Res., 9:2164 (1994).
40. R. A. Bauer, N. M. Sbrockey, and W. E. Brower, Jr., J. Mater. Res., 8:2858 (1993).
41. M. Silviera, M. Becucci, E. Castelluci, F. P. Mattiot, V. Barbarossa, R. Tomaciello, and F. Galluzzi, Diamond and Related Materials, 2:1257 (1993).
42. T. Takarada, H. Takezawa, N. Nakagawa, and K. Kato, Diamond and Related Materials, 2:323 (1993).
43. E. J. Bienk and S. S. Eskildsen, Diamond and Related Materials, 2:432 (1993).
44. H. Maeda, S. Ikari, S. Masuda, K. Kusakabe, and S. Morooka, Diamond and Related Materials, 2:758 (1993).
45. R. Steiner, G. Stingeder, M. Grasserbauer, R. Haubner, and B. Lux, Diamond and Related Materials, 2:958 (1993).
46. Y. Chakk, R. Berner, and A. Hoffman, Appl. Phys. Lett., 66:2819 (1995).
47. S. Yugo, T. Kania, T. Kimura, and T. Muto, Appl. Phys. Lett., 58:1036 (1991).
48. X. Jiang, K. Schiffmann, A. Wetphal, and C. P. Klages, Appl. Phys. Lett., 63:1203 (1993).
49. X. Jiang, C. P. Klages, R. Zachai, M. Hartweg, and H. J. Fusser, Appl. Phys. Lett., 62:3438 (1993).
50. S. D. Wolter, B. R. Stoner, J. T. Glass, P. J. Ellis, D. S. Buhaenko, C. E. Jenkins, and P. Southworth, Appl. Phys. Lett., 62:1215 (1993).
51. K. Kobayashi, N. Mutsukura, and Y. Machi, Materials and Manufacturing Processes, 7:395 (1992).
52. Y. Nakamura, K. Tamaki, Y. Watanabe, and S. Hirayama, J. Mater. Res., 9:1619 (1994).
53. R. J. Meilunas, R. P. H. Chang, S. Liu, and M. M. Kappes, Appl. Phys. Lett., 59:3461 (1991).
54. J. J. Dubray, C. G. Pantano, and W. A. Yarbrough, J. Appl. Phvs., 72:3136 (1992).
55. P. N. Barnes and R. L. C. Wu, Appl. Phys. Lett., 62:37 (1993).
56. A. P. Malshe, A. Khanolkar, W. D. Brown, S. N. Yedave, and H. A. Naseem, Proc. of Int. Mtg. of the Electrochem. Soc., 97-32:399 (1998).
57. Jyn-Ming Ting and Max L. Lake, J. Mater., p. 23, March 1994 (1994).
58. M. J. Ulczynski, D. K. Reinhard, M. Prystajko, and J. Asmussen, Advances in New Diamond Science and Technology, S. Saito, N. Fujimori, O. Fukunaga, M. Kamo, K. Kobashi and M. Yoshikawa, Eds., MYU, Tokyo, p. 41 (1994).
59. H. C. Barshilia, B. R. Mehta, and V. D. Vankar, J. Mater. Res., 11:1019 (1996).
60. W. L. Hsu, Appl. Phys. Lett., 59:1427 (1991).
61. D-W. Kweon and J-Y. Lee, Mater. Res. Bull., XXVII:783 (1992).
62. K. L. Menningen, C. J. Erickson, M. A. Childs, L. W. Anderson, and J. E. Lawler, J. Mater. Res., 10:1108 (1995).
63. M. Pandey, V. Sugandhi, R. D'Cunha, A. K. Sikder, and D. S. Mishra, Bull. Mater. Sci., 21:479 (1998).
64. K-H. Thürer, M. Schreck, and B. Stritzker, Electrochem. Soc. Proc., 97-32:142 (1998).
65. P. Wurtzinger, N. Fuchs, P. Pongratz, M. Schreck, R. Heßmer, and B. Stritzker, Diamond and Related Material, 6:752 (1997).
66. N. Kurashima, K. Akita, T. Kurata, H. Shinoda, S. Minemura and N. Mutsukura, Electrochem. Soc. Proc., 97-32:189 (1998).
67. S. Jin and T. D. Moustakas, Appl. Phys. Lett., 65:403 (1994).
68. Francois Silva and Alix Gicquel, Electrochem. Soc. Proc., 97-32:99 (1998).
69. B. V. Spitsyn, A. V. Dobrynin, A. F. Belyanin, I. V. Galoushko, A. B. Spitsyn, A. E. Alexenko, L. L. Bouilov, and V. P. Stoyan, Electrochem. Soc. Proc., 97-32:70 (1998).
70. J. E. Field, Properties of Diamond, Academic Press, London (1979).
71. Takeyasu Saito, Kyo Ohtsubo, Shigenori Tsurunga, Masanori Kameta, Katsuki Kusakabe, Shigeharu Morooka, Hideaki Maeda, and Hideo Kiyota, Electrochem. Soc. Proc., 97-32:88 (1998).
72. N. Fujimori, H. Nakahataand T., and Imai, Jpn. J. Appl. Phys., 29:824 (1990).
73. A. Feldman, C. Beetz, P. Klocek, and G. Lu, J. Res. Natl. Inst. Stand. Technol., 98:375 (1993).
74. Ling Yan, A. Haji-Sheikh and J. V. Beck, J. Electron. Pack., 115:276, (1993).
75. Albert Feldmane, Applications of Diamond Films and Related Materials: Third International Conference, 1995, A. Feldman, Y. Tzeng. W.A. Yarborough, M. Yoshikawa, and M. Murakawa, Eds., 627 (1995).
76. L. Y. Andrew, H. C. Ong, L. M. Stewart and R. P. H. Chang, J. Mater. Res., 12(7):1796 (1997).
77. A. P. Malshe, H. A. Naseem, W. D. Brown, and L. W. Schaper, Applications of Diamond Films and Related Materials: Third International Conference, 1995, A. Feldman, Y. Tzeng, W.A. Yarborough, M. Yoshikawa, and M. Murakawa, Eds., 611 (1995).
78. W. E. Wesolowski, R. J. DeKenipp, and M. P. Ram Panicker, Proceedings of International Conference on Multichip Modules - ICEMCM'95, 146 (1995).
79. M. H. Gordon, S. Jamil, H. A. Naseem, W. D. Brown and A. P. Malshe, Proceedings of the 1995 ASME International Mechanical Engineering Congress and Exposition, 319:145 (1995).
80. D. G. Bhat, D. G. Johnson, A. P. Malshe, H. A. Naseem, W. D. Brown, L. W. Schaper, and C-H. Shen, Diamond and Related Materials, 4:921 (1995).
81. B. Watermeyer, Diamond Cutting (2nd ed.), Centour, Hohannesburg (1982).
82. P. Grodzinski, Diamond Technology, NAG Press, London (1953).
83. M. Yoshikawa, SPIE Diamond Optics III:210 (1990).
84. H. Tokura and M. Yoshikawa, Applications of Diamond Films and Related Materials: 3rd International Conference, 253 (1995).
85. W. S. Lee, Y. J. Baik, and K. Y. Eyn, Diamond and Related Materials, 4:989 (1995).
86. C-F. Yang, H. Okura, and M. Yoshikawa, Science and Technology of New Diamond, S. Saito, O. Fukunaga and M. Yoshikawa, Eds., p. 135 (1990).
87. S. Jin, J.E. Graebner, T. H. Tiefel, G. W. Kammlott, and G. J. Zydzik, Diamond and Related Materials 1:949 (1992).
88. S. Jin, W. Zhu, and J. E. Graebner, Applications of Diamond Films and Related Materials: 3rd International Conference, 209 (1995).
89. S. Jin, W. Zhu, and J. E. Graebner, Electrochemical Society Proceedings, 97-32:422 (1997).
90. G. S. Raju, Chemical-Assisted Mechanical Polishing and Planarization of CVD Diamond Substrate for MCM Applications, M.S.E.E. thesis, University of Arkansas, Fayetteville, AR 72701 (1994).
91. S. Tezuka and M. Yoshikawa, New Diamond, 17:36 (1990).
92. M. Rochechild, C. Arnone, and D. J. Ehrlich, J. Vac. Sci. Technol., B4(1):310 (1986).
93. A. M. Ozkan, A. P. Malshe, and W. D. Brown, Diamond and Related Materials, 6:1789 (1997).
94. T. Chien, C. Cutshaw, C. Tanger, and Y. Tzeng, Applications of Diamond and Related Materials: 3rd International Conference, 257 (1995).
95. A. P. Malshe, B. S. Park, W. D. Brown, A. Muyshondt, and H. A. Naseem, Diamonds and Related Materials, 8:1198 (1999).
96. U. Bogli, A. Blatter, S. M. Pimenov, A. A. Smolin, and V. I. Konov, Diamond and Related Materials, 1:782 (1992).
97. K. V. Ravi and V. G. Zarifis, Laser Polishing of Diamond, Proceedings of the 3rd International Symposium on Diamond Materials: The Electrochemical Society, Honolulu, Hawaii (1993).
98. rd International Conference, 271 (1995).
99. A. P. Malshe, B. S. Park and W. D. Brown, Presented at International Conference on Metallic Coatings and Thin Films (ICMC-TF'97), San Diego, USA (1997).
100. D. F. Grogan, T. Zhao, B. G. Bovard, and H. A. MacLeod, Applied Optics, 31(10): 1483 (1992).
101. Donald R. Gilbert, Dong-Gu Lee, and Rajiv K. Singh, J. Mater. Res., 13:1735 (1998).
102. G. S. Sandhu and W. K. Chu, Appl. Phys. Lett., 55(5):437 (1989).
103. A. P. Malshe, W. D. Brown, H. A. Naseem, and L. W. Schaper, U. S. Patent #5,472,370, December 5, 1995.
104. M. R. Pawar, W. D. Brown, A. P. Malshe, H. A. Naseem S. S. Ang and R. K. Ulrich, The Int. J. Microcircuits Electron. Pack., 19(3):316 (1996).
105. W. D. Brown, H. A. Naseem, A. P. Malshe, John H. Glezen, and W. D. Hinshaw, Mat. Res. Soc. Symp. Proc., 391:59 (1995).
106. Charles Iacovangelo and Elihu Jerabek, Int. J. Microcircuits Electron. Pack. 17(3):(1994).
107. Larry Gilbert, NASA Tech Briefs, 63, June 1997.
108. John Glezen, M.S. thesis Gold Electroplating of CVD Diamond, University of Arkansas, Fayetteville, Arkansas (1995).
109. C. T. Wang, Don Dinella, and Steve S. Wagner, Plating and Surface Finishing, 15(4):75 (1993).
110. K. D. Baker, U.S. Patent # 3,776,822 (1973).
111. J. Crumpton, R. Koba, K. Valenta, B. Speck, C. Roach, D. Kuty, and R. Keusseyan, Extended Abstracts, IMAPS Advanced Technology Workshop on Thermal Spreaders and Heat Sinks, Beaver Creek, Colorado, April 1997.
112. C. D. Iacovangelo, E. C. Jerabek, and R. H. Wilson, GE Pat. Appl. RD23427.
113. M. Seal, Diamond and Related Materials, 1:1075 (1992).
114. Ajay P. Malshe, S. Jamil, M. H. Gordon, H. A. Naseem, W. D. Brown and L. W. Schaper, Advanced Packaging, 50, September/October 1995.
115. D. K. Hale, J. Mater. Sci., 11:2105 (1976).
116. Y. Benvensite, J. Appl. Phys., 61:2840 (1987).
117. K. Jagannadham, J. Vac. Sci. Technol., A17:373 (1999).
118. Thomas J. Moravec and Arjun Partha, Advanced Packaging, October 8, 1993.
119. T. J. Moravec, R. C. Eden, and D. A. Schaefer, Proceedings of 1993 International Conference and Exhibit and MCM's, 85 (1993).
120. Howard L. Davidson, John A. Kerns, Daniel Makowiecki, and Nicholas J. Colella, Extended Abstracts, ISHM Advanced Technology Workshop on Advancements in Design, Materials and Processes for Thermal Spreaders and Heat Sinks, Beaver Creek, Colorado, April 1996.
121. John A. Kerns, Nicholas J. Colella, Daniel Makowiecki, and Howard L. Davidson, Int. J. Microcircuits Electron. Pack., 19:206 (1996).
122. S. J. Harris and A. M. Weiner, J. Appl. Phys., 75:5026 (1994).
123. P. G. Patridge, G. Lu, P. May, and J. W. Steeds, Diamond and Related Materials 4:848 (1995).
124. Chris H. Stoessel, C. Pan, J. C. Withers, D. Wallace, and R. O. Loutfy, Mat. Res. Soc. Symp. Proc., 390:147 (1995).
125. Julian A. Carey, Dave Collins, and Ban Poh Loh, Extended Abstracts, IMAPS Advanced Technology Workshop on Thermal Spreaders and Heat Sinks, Beaver Creek, Colorado, April 1997.
126. Dean A. Schaefer, Richard C. Eden, and Thomas J. Moravec, Proceedings of the ISHM Technical Program, Anaheim, California, 3:1177 (1993).
127. Masaki Nagai, Keiichiro Tanabe, Yoshiaki Kumazawa, and Naoji Fujimori, ISHM-97 Conference, Philadelphia, 1997.
128. L. M. Napolitano Jr., M. R. Daily, E. Meeks, D. Miller, D. P. Norwood, D. W. Peterson, C. A. Reber, J. E. Robles, and W. Worobey, ICEMM Proceedings - International Conference and Exhibition on Multichip Modules, Denver, Colorado, 92 (1993).
129. Jan W. Vandersande, Richard Ewell, Jean-Pierre Fleurial, and Hylan B. Lyon, Applications of Diamond Films and Related Materials: 3rd International Conference, 623 (1995).
130. Mare Gomes-Cassers and Philip M. Fahis, IEEE MTT-S Digest, 227 (1996).
131. C. J. Russell, Synthetic Diamond, John Wiley and Sons, New York (1994).
132. S-H. Lin and L. H. Sverdrup, Mater. Res. Soc. Symp. Proc., 416 383 (1996).
133. A. Argoitia, H. B. Martin, E.J. Rozak, U. Landau and J. C. Agnus, Mater. Res. Soc. Symp. Proc., 416:349 (1996).
134. S. S M. Chan, R. D. McKeag, M. D. Whitfield, and R. B. Jackman, Phys. Status Solidi A 154:445 (1996).
135. H. Nakahata, K. Higaki, S. Fugii, A. Hachigo, H. Kitabayashi, K. Tanabe, Y. Seki and S. Shikata, Proc. IEEE Ultrasonics Symp., 361 (1995).
136. J. T. Glass, B. A. Fox, D. L. Dreifus, and B. R. Stoner, MRS Bulletin, 49, September 1998.
137. G. Sh. Gildenblat and S. A. Grot, IEEE Electron Device Lett., 12:37 (1991).
138. A. J. Tessmer, L. S. Plano, and D. L. Dreifus, IEEE Electron Device Lett., 14:66 (1993).
139. H. Shiomi, Y. Nishibayashi, N. Toda, and S. Shikata, IEEE Electron Device Lett., 16:36 (1995).
140. Hui Jin Looi, Lisa Y. S. Pang, Yanyang Wang, Michael D. Whitfield, and Richard B. Jackman, IEEE Electron Device Lett., 19:112 (1998).
141. H. J. Looi, L. Y. S. Pang, Y. Wang, M. D. Whitfield, and R. B. Jackman, Diamond and Related Materials, 7:565 (1998).
142. P. Gluche, A. Aleksov, A. Vescan, W. Ebert, and E. Kohn, IEEE Electron Device Lett., 18:547 (1997).
143. K. Tsugawa, K. Kitatani, H. Noda, A. Hokazono, K. Hirose, M. Tajima and H. Kawarada, Diamond and Related Materials 8:927 (1999).
144. D. L. Dreifus, in Diamond: Electronic Properties and Applications, L. S. Pan, and D. R. Kania, Eds., Kluwer Academic Publishers, Boston, 1995 472.
145. H. Kawarada, M. Aoki, and M. Ito, Appl. Phys. Lett., 65:1563 (1994).
146. K. Miyata, K. Nishimura, and K. Kobashi, IEEE Trans. Elec. Dev., 42:2010 (1995).
147. L. Y. S. Pang, S. S. M. Chan, and R. B. Jackman, Appl. Phys. Lett., 70:339 (1997).
148. L. Y. S. Pang, S. S. M. Chan, C. Johnston, P. R. Chalker, and R. B. Jackman, Diamond and Related Materials, 6:333 (1997).
149. S. P. Lansley, Hui Jin Looi, M. D. Whitfield, and R. B. Jackman. Diamond and Related Materials 8:946 (1999).
150. J. W. Vandersande and L. D. Zoltan, Proc. 3rd Int. Symp. on Diamond Materials, The Electrochemical Society, 93-17:729 (1993).
151. S. M. Sze, Physics of Semiconductor Devices, John Wiley and Sons, New York, 1981.
152. M. I. Landstrass and K. V. Ravi, Appl. Phys. Lett., 55:975 (1989).
153. M. I. Landstrass and K. V. Ravi, Appl. Phys. Lett., 55:1391 (1989).
154. A. T. Collins and A. W. S. Williams, J. Phys. C: Solid St. Phys., 4:1789 (1971).
155. R. M. Chrenko, Phys. Rev., B7:4560 (1973).
156. A. T. Collins and E. C. Lightowlers, The Prorerties of Diamond, J. E. Field, Ed., (Academic Press, London, 1979) 79.
157. D. M. Malta, J. A. V. Windheim, H. A. Wynands, and B. A. Fox, J. Appl. Phys., 77:1536 (1995).
158. T. H. Borst, S. Strobel, and O. Weis, Appl. Phys. Lett., 67:2651 (1995).
159. T. H. Borst, P. C. Munzinger, and O. Weis, Diamond and Related Materials, 3:515 (1994).
160. T. H. Borst and O. Weis, Diamond and Related Materials, 4:948 (1995).
161. H. M. Strong and R. H. Wentdorf, Jr., Naturwissenschaften, 59:1 (1972).
162. N. Fujimori, H. Nakahata, and T. Imai, Jpn. J. Appl. Phys., 29:824 (1990).
163. H. Shiomi, Y. Nishibayashi, and N. Fujimori, Jpn. J. Appl. Phys., 30:1363 (1991).
164. E. P. Visser, G. J. Bauhuis, G. Janssen, W. Vollenberg, W. J. P. van Enckevort, and L. J. Giling, J. Phys. Condens. Matter, 4:7365 (1992).
165. R. G. Farrer, Solid-State Communications, 7:685 (1969).
166. K. Okano and K. K. Gleason, Electron. Lett., 31:74 (1995).
167. N. A. Fox, W. N. Wang, T. J. Davis, J. W. Steeds, and P. W. May, Appl. Phys. Lett., 71:2337 (1997).
168. D. Zhou, A. R. Krauss, L. C. Qin, T. G. McCauley, D. M. Gruen, T. D. Corrigan, R. P. H. Chang, and H. Gnaser, J. Appl. Phys., 82:4546 (1997).
169. K. Okano, T. Yamada, H. Ishihara, S. Koizumi, and J. Itoh, Appl. Phys. Lett., 70:2201 (1997).
170. K. Jackson, M. R. Pederson, and J. G. Harrison, Phys. Rev. B 41:12641 (1990).
171. S. A. Kajihari, A. Antonelli, J. Bernholc, and R. Car, Phys. Rev. Lett., 66:2010 (1991).
172. J. R. Flemish, S. N. Schauer, R. Wittstruck, and M. I. Landstrauss, Diamond and Related Materials, 3:672 (1994).
173. K. Okano, Appl. Phys., A 51:344 (1990).
174. K. Okano, H. Kiyota, T. Kurosu, and M. Iida, Diamond and Related Materials, 3:35 (1993).
175. S. A. Kajihari, A. Antonelli, J. Bernholc, and R. Car, Phys. Rev. Lett., 66:2010 (1991).
176. S. A. Kajihari, A. Antonelli, and J. Bernholc, Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors, J. T. Glass, R. Messier, and N. Fujimori, Eds., Materials Research Society, 315 (1990).
177. M. N. Gamo, Proceedings of ADC/FCT'99, 54 (1999).
178. H. Shimoi, H. Nakahata, T. Imai, Y. Nishibayashi, and N. Fujimori, J. Appl. Phys., 28:758 (1989).
179. K. L. Moazed, IEEE Electron Devices Lett., 9 350 (1988).
180. M. Werner, O. Dorsch, H. U. Baerwind, A. Ersoy, E. Obermeier, C. Johnston, S. Romani, P. R. Chalker, V. Moore, and I. M. Buckley-Golder, Diamond and Related Materials, 3:983 (1994).
181. M. Werner, R. Job, A. Denisenko, A. Zaitsev, W. R. Fahrner, C. Johnston, and P. R. Chalker, Diamond and Related Materials, 5:723 (1996).
182. W. Ebert, A. Vescan, T. H. Borst, and E. Kohn, IEEE Electron Device Lett., 15:289 (1994).
183. M. W. Geis, D. D. Rathman, D. J. Ehrlich, R. A. Murphy, and W. T. Lindley, IEEE Electron. Device Lett., 8:341 (1987).
184. M. W. Geis, N. N. Efremow, and J. A. von Windheim, Appl. Phys. Lett., 63:952 (1993).
185. W. Ebert, A. Vescan and E. Kohn, Proc. 4th European Conference on Diamond, Diamond-Like and Related Materials, Albufeira, 12, (1993).
186. G. S. Gildenblat, S. A. Grot, C. W. Hatfield, A. R. Badzian, and T. Badzian, IEEE Electron Device Lett., 11:371 (1990).
187. W. P. Kang, J. L. Davidson, Y. Gurbuz, and D. V. Kerns, J. Appl. Phys., 78:1101 (1995).
188. S. A. Grot and G. Sh. Gilderblat, Appl. Phys. Lett., 53:586 (1988).
189. H. Shimoi, H. Nakahata, T. Imai, Y. Nishibayashi, and N. Fujimori, J. Appl. Phys., 28:758 (1989).
190. G. Sh. Gilderblat, S. A. Grot, C.W. Hatfield, A. R. Badzian and T. Badzian, IEEE Electron Device Lett., 11:100 (1990).
191. M. W. Geis, D. D. Rathman, D. J. Ehrlich, R. A. Murphy and W.T. Lindley, IEEE Electron Device Lett., 8:341 (1987).
192. G. S. H. Gildenblat, S. A. Grot, C. W. Hatfield , A. R. Badzian, and T. Badzian, IEEE Electron Device Lett., 11:371 (1990).
193. V. Venkatesan, Appl. Phys. Lett., 63:1065 (1993).
194. G. H. Glover, Solid-State Electron., 16:973 (1973).
195. G. Sh. Gildenblat, S. A. Grot, C. R. Wronski, A. R. Badzian, T. Badzian, and R. Messier, Appl. Phys. Lett., 53:586 (1988).
196. M. W. Geis, J. A. Gregory, and B. B. Pate, IEEE Trans. Electron. Devices, ED-38:619 (1991).
197. W. Ebert, A. Vescan, P. Gluche, T. Borst, and E. Kohn, Diamond and Related Materials, 6:329 (1997).
198. A. Vescan, I. Daumiller, P. Gluche, W. Ebert, and E. Kohn, Diamond and Related Materials, 7:581 (1998).
199. K. Okano, H. Kiyota, T. Iwasaki, Y. Nakamura, Y. Akiba, T. Kurosu, M. Iida, and T. Nakamura, Solid-State Electron., 34:139 (1991).
200. Ken Okano and H. Kiyota, Appl. Phys. Lett., 58:840 (1991).
201. K. Miyata, D. L. Dreifus, and K. Kobashi, Appl. Phys. Lett., 60:480 (1992).
202. V. Venkatesan, K. Das, G. G. Fountain, R. A. Rudden, J. B. Posthill, and R. J. Markunas, J. Electrochem. Soc., 139:1445 (1992).
203. P. Gluche and S. D. Wolter, IEEE Electron Device Lett., 17:270 (1996).
204. Qiang Zhou, Fabrication and Characterization of Diamond Power Schottky Diode, Masters Thesis, Vanderbilt University, 1999.
205. J. F. Prins, Appl. Phys. Lett., 41:950 (1982).
206. T. Zheng, T. H. Lin, J. L. Davidson, and L. S. Lan, Proc. 7th Biennial University/Government/Industry Microelectronics Symposium, 187, June 9-11, 1987.
207. J. Bardeen and W. H. Brattain, Phys. Rev., 230 (1948).
208. K. Hayashi, S. Yamanaka, H. Okushi, and K. Kajimura, Appl. Phys. Lett., 35:376 (1996).
209. H. Kawarada, Surf. Sci. Rep., 26:205 (1996).
210. H. Kawarada, M. Aoki, H. Sasaki, and K. Tsugawa, Diamond and Related Material, 3:961 (1994).
211. M. Aoki and H. Kawarada, Jpn. J. Appl. Phys., 33:L708 (1994).
212. Y. Mori and H. Kawarada, Appl. Phys. Lett., 58:940 (1991).
213. H. Shiomi, Y. Nishibayashi, and N. Fujimori, Proc. 2nd Int. Conf. New Diamond Sci. Technol., 975:(1991). 214. G. G. Fountain, Proc. Electrochem. Soc., 91-8:198 (1991).
214. H. Shiomi, Y. Nishibayashi, and N. Fujimori, Proc. 2nd Int. Conf. New Diamond Sci. Technol., 975:(1991). 214. G. G. Fountain, Proc. Electrochem. Soc., 91-8:198 (1991).
215. C. R. Zeisse, C. A. Hewett, R. Nguyen, J. R. Zeidler, and R. G. Wilson, IEEE Electron Device Lett., 12:602 (1991).
216. W. Tsai, IEEE Electron Device Lett., 12:157 (1991).
217. H. Shimoi, Y. Nishibayashi, and N. Fujimori, Jpn. J. Appl. Phys, 28:2153 (1989).
218. S. A. Grot, G. Sh. Gildenblat, and A. R. Badzian, IEEE Electron Device Lett., 13:462 (1992).
219. C. R. Zeisse, C. A. Hewett, R. Nguyen, J. R. Zeidler, and R. G. Wilson, IEEE Electron Device Lett., 12:602 (1991).
220. A. J. Tessmer, K. Das, and D. L. Dreifus, Diamond and Related Materials, 1 89 (1992).
221. H. Kiyota and K. Okano, Jpn. J. Appl. Phys., 30 L2015 (1991).
222. A. J. Tessmer, L. S. Plano, and D.L. Dreifus, 50th Annual Device Res. Conf., Boston, MA, June 22-24, 1992.
223. M. I. Landstrass and K. V. Ravi, Appl. Phys. Lett., 55:1391 (1989).
224. T. Tsuno, T. Imai, Y. Nishibayashi, K. Hamada, and N. Fujmori, Jpn. J. Appl. Phys., 30:1063 (1991).
225. H. Kawarada, M. Aoki, H. Sasaki, and K. Tsugawa, Diamond and Related Materials, 3:961 (1994).
226. H. Nakahata, T. Imai, and N. Fujimori, Proc. 2nd Int. Symp. Diamond Materials, The Electrochemical Society, 487 (1991).
227. M. Aoki and H. Kawarada, Jpn. J. Appl. Phys., 33:L708 (1994).
228. Hiroshi Kawarada, Makoto Aoki, and Masahiro Ito, Appl. Phys. Lett., 65:1563 (1994).
229. Masahiro Itoh and Hiroshi Kawarada, Jpn. J. Appl. Phys., 34:4677 (1995).
230. H. Kawarada, M. Itoh, and A. Hokazono, Jpn. J. Appl. Phys., 35:L1165 (1996).
231. J. van der Weide, Z. Zhang, P. K. Baumann, M. G. Wemnsell, J. Bernholc, and R. J. Nemanich, Phys. Rev. B, 50:5803 (1994).
232. F. J. Himpsel, J. A. Knapp, J. A. Van Vechten, and D. E. Eastman, Phys. Rev. B, 20:624 (1979).
233. M. W. Geis, J. A. Gregory, and B.B. Pate, IEEE Trans. Electron Devices, 38:619 (1991).
234. R. J. Nemanich, P. K. Baumann, and J. Van der Weide, Proceedings of the Applied Diamond Conference, 1:17 (1995).
235. C. Bandis and B. B. Pate, Phys. Rev. B, 52:12056 (1995).
236. I. L. Krainsky, V. M. Asnin, G. T. Mearini, and J. A. Dayton, Phys. Rev. B, 53:7650 (1996).
237. C. Bandis and B. B. Pate, Appl. Phys. Lett., 69 366 (1996).
238. J. Liu, V. V. Zhirnov, W. B. Choi, G. J. Wojak, A. F. Myers, J. J. Cuomo, and J. J. Hren, Appl. Phys. Lett., 69:4038 (1996).
239. T. P. Humphreys, R. E. Thomas, D. P. Malta, J. B. Posthill, M. J. Mantini, R. A. Rudder, G. C. Hudson, R. J. Markunas, and C. Pettenkofer, Appl. Phys. Lett., 70:1257 (1997).
240. J. E. Yater, A. Shih, and R. Abrams, Phys. Rev. B, 56:56 (1997).
241. I. L. Krainsky and V. M. Asnin, Appl. Phys. Lett., 72:2574 (1998).
242. J. Liu, V. V. Zhirnov, A. F. Myers, G. J. Wojak, W. B. Choi, J. J. Hren, S. D. Wolter, M. T. McClure, B. R. Stoner, and J. T. Glass, J. Vac. Sci. Technol. B, 13:422 (1994).
243. B. C. Djubua and N. N. Chubun, IEEE Trans. Electron Devices, 38:2314 (1991).
244. V. V. Zhirnov, E. I. Givargizov, and P. S. Plekhanov, J. Vac. Sci. Technol. B, 13:418 (1994).
245. E. I. Givargizov, J. Vac. Sci. Technol. B, 13:414 (1994).
246. J. Liu, V. V. Zhirnov, G. J. Wojak, A. F. Myers, W. B. Choi, J. J. Hren, S. D. Wolter, M. T. McClure, B. R. Stoner, and J. T. Glass, Appl. Phys. Lett., 65:2842 (1994).
247. E. I. Givargizov, E. V. Rakova, V. V. Zhirnov, L. L. Aksenova, and D. M. Zverev, Phys. Dokl., 39:766 (1994).
248. E. I. Givargizov, V. V. Zhirnov, A. N. Stepanova, E. V. Rakova, A. N. Kiselev, and P. S. Plekhanov, Appl. Surf. Sci., 87-88:24 (1995).
249. V. V. Zhirnov, E. I. Givargizov, A. V. Kandidov, B. V. Seleznev, and A. N. Alivova, J. Vac. Sci. Technol. B, 15:446 (1997).
250. E. I. Givargizov, V. V. Zhirnov, N. N. Chubun, and A. B. Voronin, J. Vac. Sci. Technol. B, 15:442 (1997).
251. E. I. Givargizov, V. V. Zhirnov, N. N. Chubun, and A. B. Voronin, J. Vac. Sci. Technol. B, 15:450 (1997).
252. S. Albin, J. Zheng, J. B. Cooper, W. Fu, and A. C. Lavarias, Appl. Phys. Lett., 71:2848 (1997).
253. G. Yaun, C. C. Jin, B. L. Zhang, H. Jiang, T. M. Zhou, Y. Q. Ning, Y. Z. Wang, W. B. Wang, Y. X. Jin, H. Ji, and C. Z. Gu, J. Vac. Sci. Technol. B, 16:710 (1998).
254. W. B. Choi, J. J. Cuomo, V. V. Zhirnov, A. F. Myers, and J. J. Hren, Appl. Phys. Lett., 68:720 (1996).
255. V. V. Zhirnov, W. B. Choi, J. J. Cuomo, and J. J. Hren, Appl. Surf. Sci., 94-95:123 (1996).
256. R. Schlesser, M. T. McClure, W. B. Choi, J. J. Hren, and Z. Sitar, Appl. Phys. Lett., 70:1596 (1997).
257. W. B. Choi, R. Schlesser, G. Wojak, J. J. Cuomo, Z. Sitar, and J. J. Hren, J. Vac. Sci. Technol. B, 16:716 (1998).
258. M. T. McClure, R. Schlesser, B. L. McCarson, and Z. Sitar, J. Vac. Sci. Technol. B. 15:2067 (1997).
259. M. Q. Ding, A. F. Myers, W. B. Choi, R. D. Vispute, S. M. Camphausen, J. Narayan, J. J. Cuomo, J. J. Hren, and J. Bruley, J. Vac. Sci. Technol. B, 15:840 (1997).
260. J. H. Jung, B. K. Jum, Y. H. Lee, M. H. Oh, and J. Jang, Enhancement of Electron Emission Efficiency and Stability of Molybdenum Field Emitter Array by Diamond-Like Carbon Coating, IEDM 96 Technical Digest, 1996.
261. S. J. Lee, S. N. Lee, S. W. Lee, D. Jeon, and K. Lee, J. Vac. Sci. Technol. B, 15:457 (1997).
262. J. H. Jung, B. K. Ju, H. Kim, and M. H. Oh, S. J. Chung, and J. Jang, J. Vac. Sci. Technol. B, 16:710 (1998).
263. F. Y. Chuang, C. Y. Sun, H. F. Cheng, C. M. Huang, and I. N. Lin, Appl. Phys. Lett, 68:1666 (1996).
264. C. Wang, A. Garcia, D. C. Ingram, M. Lake, and M. E. Kordesch, Electron. Lett., 27:1459 (1991).
265. N. S. Xu, Y. Tzeng, and R.V. Latham J. Phys. D: Appl. Phys., 26:1776 (1993).
266. N. S. Xu, R. V. Latham, and Y. Tzeng, Electron. Lett., 29:1596 (1993).
267. N. S. Xu, Y. Tzeng, and R.V. Latham, J. Phys. D: Appl. Phys., 27 1988 (1994).
268. D. Hong and D. M. Aslam, J. Vac. Sci. Technol. B, 13:427 (1994).
269. N. Kumar, H. Schmidt, and C. Xie, IEEE Colloquium on Diamond in Electronics and Optics, 9/1 (1993).
270. N. Kumar, H. Schmidt, and C. Xie, Solid State Technol., 38:71 (1995).
271. M. W. Geis and J. C. Twichell, Appl. Phys. Lett., 67 1328 (1995).
272. W. Zhu, G. P. Kochanski, S. Jin, and L. Seibles, J. Appl. Phys., 78:2707 (1995).
273. W. Zhu, G. P. Kochanski, S. Jin, and L. Seibles, Electrochemical Society Proc., 95-94:531 (1995).
274. V. L. Humphreys and J. Khachan, Electron. Lett., 31:1018 (1995).
275. W. Zhu, G. P. Kochanski, S. Jin, L. Seibles, D. C. Jacobson, M. McCormack, and A. E. White, Appl. Phys. Lett., 67:1157 (1995).
276. Q. Chen and Z. Lin, Appl. Phys. Lett., 68:2450 (1996).
277. W. N. Wang, N. A. Fox, T. J. Davis, D. Richardson, G. M. Lynch, J. W. Steeds, and J. S. Lee, Appl. Phys. Lett., 69:2825 (1996).
278. J. S. Lee, K. S. Lim, and I. N. Lin, Appl. Phys. Lett., 71:554 (1997).
279. M. Nagao, T. Kondo, Y. Gotoh, H. Tsuji, J. Ishikawa, K. Miyata, and K. Kobashi, Appl. Phys. Lett., 71:2806 (1997).
280. J. Lee, K. Liu, and I. Lin, J. Appl. Phys., 82:3310 (1997).
281. T. Habermann, A. Gohl, D. Nau, M. Wedel, G. Muller, M. Crist, M. Schreck, and B. Stritzker, J. Vac. Sci. Technol. B, 16:693 (1998).
282. S. J. Kwon, Y. H. Shin, D. M. Aslam, and J. D. Lee, J. Vac. Sci. Technol. B, 16:712 (1998).
283. T. Sugion, S. Kawasaki, Y. Yokota, Y. Iwasaki, and J. Shirafuji, J. Vac. Sci. Technol. B, 16:720 (1998).
284. K. H. Park, S. Lee, K. Song, J. I. Park, K. J. Park, S. Han, s. J. Na, N. Lee, and K. H. Koh, J. Vac. Sci. Technol. B, 16:724 (1998).
285. D. Hong and D. M. Aslam, IEEE Trans. Electron Devices, 45:977 (1998).
286. M. W. Geis, J. C. Twichell, and T. M Lyszcazarz, J. Vac. Sci. Technol. B, 14:2060 (1996).
287. W. N. Wang, N. A. Fox, D. Richardson, G. M. Lynch, and J. W. Steeds, J. Appl. Phys., 81:1505 (1997).
288. Y. W. Ko and S. I. Kim, J. Appl. Phys., 82:2631 (1997).
289. K. C. Walter, H. H. Kung, and C. J. Maggiore, Appl. Phys. Lett., 71:1320 (1997).
290. J. Chen, A. X. Wei, S. Z. Deng, Y. Lu, X. G. Zheng, D. H. Chen, D. Mo, S. Q. Peng, and N. S. Xu, J. Vac. Sci. Technol. B, 16:697 (1998).
291. J. F. Xu, Q. Li, Z. Fan, J. Zhou, Y. Zhu, D. Mao, W. P. Kang, and J. L. Davidson, Proc. of the 11th International Vacuum Microelectronics Conference, July 19-24, 1998, North Carolina State University, Raleigh, NC.
292. L. S. Pan, T. E. Felter, D. A. A. Ohlberg, W. L. Hsu, C. A. Fox, R. Cao, and G. Vergara, J. Appl. Phys., 82:2624 (1997).
293. S. J. Chung, J. H. Moon, K. C. Park, M. H. Oh, W. I. Milne, and J. Jang, J. Appl. Phys., 82:4707 (1997).
294. K. C. Park, J. H. Moon, S. J. Chung, M. H. Oh, W. I. Milne, and J. Jang, J. Vac. Sci. Technol. B, 15:428 (1997).
295. K. C. Park, J. H. Moon, S. J. Chung, and J. Jang, J. Vac. Sci. Technol. B, 15:454 (1997).
296. B. L. Weiss, A. Badzian, L. Pilione, T. Badzian, and W. Drawl, Appl. Phys. Lett., 68:2450 (1996).
297. B. L. Weiss, A. Badzian, L. Pilione, T. Badzian, and W. Drawl, J. Vac. Sci. Technol. B, 16:681 (1998).
298. T. Ko, B. Chung, J. Y. Lee, and D. Jeon, J. Vac. Sci. Technol. B, 16:700 (1998).
299. F. Y. Chuang, C. Y. Sun, T. T. Chen, and I. N. Lin, Appl. Phys. Lett, 69:3504 (1996).
300. F. Y. Chuang, W. C. Wang, H. F. Cheng, C. Y. Sun, and I. N. Lin, J. Vac. Sci. Technol. B, 15:454 (1997).
301. Y. K. Hong, J. Kim, C. Park, J. S. Kim, and J. K. Kim, J. Vac. Sci. Technol. B, 16:454 (1998).
302. T. Ko, B. Chung, J. Y. Lee, and D. Jeon, J. Vac. Sci. Technol. B, 16:729 (1998).
303. T. Asano, Y. Oobuchi, and S. Katsumata, J. Vac. Sci. Technol. B, 13:431 (1995).
304. C. Nutzenadel, O. M. Kuttel, O. Groning, and L Schlapbach, Appl. Phys. Lett., 69:2662 (1996).
305. W. P. Kang, J. L. Davidson, M. Howell, B. Bhuva, D. L Kinser and D. V. Kerns, J. Vac. Sci. Technol. B, 14:1 (1996).
306. W. P. Kang, J. L. Davidson, M. A. George, J. Wittig, I. Milosevlijevic, Q. Li, J.F. Xu, and D.V. Kern, J. Vac. Sci. Technol. B, 15:460 (1997).
307. K. Okano, K. Hoshina, M. Lida, S. Koizumi, and T. Inuzuka, Appl. Phys. Lett., 64:2742 (1994).
308. K. Okano, S. Koizumi, and J. Itoh, J. Appl. Phys, 34:L1068 (1995).
309. T. Yamada, H. Ishihara, K. Okano, S. Koizumi, and J. Itoh, J. Vac. Sci. Technol. B, 15:1678 (1997).
310. W. P. Kang, A. Wisitsora-at, J. L. Davidson, D. V. Kerns, Q. Li, J. F. Xu, and C. K. Kim, J. Vac. Sci. Technol. B, 16:684 (1998).
311. W. P. Kang, A. Wisitsora-at, J. L. Davidson, M. Howell, D. V. Kerns, Q. Li, J. F. Xu, and C. K. Kim, J. Vac. Sci. Technol. B, 16:732 (1998).
312. A. Wisitsora-at, W. P. Kang, J. L. Davidson, Q. Li, J. F. Xu, and D.V. Kerns, App. Sur. Sci., 14:1 (1999).
313. A. Wisitsora-at, W. P. Kang, J. L. Davidson, Y. Gurbuz, Q. Li, J. F. Xu, and D.V. Kerns, Diamond and Related Materials, 8:989 (1999).
314. V.V. Zhirnov and J. J. Hren, MRS Bulletin, 42-48, Sept. 1998.
315. P. W. May, J. C. Stone, M. N. R. Ashfold, K. R. Hallam, W. N. Wang, and N. A. Fox, Diamond and Related Materials, 7:671 (1998).
316. W. P. Kang, A. Wisitsora-at, J. L. Davidson, and D. V. Kerns, IEEE Electron Device Letters, 19:379 (1998).
317. W. P. Kang, A. Wisitsora-at, J. L. Davidson, Q. Li, J. F. Xu, and D. V. Kerns, J. Vac. Sci. Tech. B, 17:740 (1999).
318. Q. Li, W. P. Kang, M. Y. Yuan, J. F. Xu, D. Zhang, and J. L. Wu, J. Vac. Sci. Tech. B, 12 676 (1994).
319. P. K. Baumann and R. J. Nemanich, J. Appl. Phys., 82:5148 (1997).
320. P. K. Baumann and R. J. Nemanich, Proc. Applied Diamond Conference, 1:41 (1995).
321. J. van der Weide and R. J. Nemanich, Phys. Rev. B, 49 13629 (1994).
322. C. Bandis, D. Haggerty, and B. B. Pate, Proc. Material Research Society, 339:75 (1994).
323. W. E. Pickett, Phys. Rev. Lett., 73:1664 (1994).
324. T. Utsumi, IEEE Trans. on Electron Devices, 38:2276 (1991).
325. N. S. Xu and R. V. Latham, J. Phys. D: Appl. Phys., 19:477 (1986).
326. P. Lerner, P. H. Cutler, and N. M. Miskovsky, J. Vac. Sci. Technol. B, 15:337 (1997).
327. P. Lerner, N. M. Miskovsky, and P. H. Cutler, J. Vac. Sci. Technol. B, 16:900 (1998).
328. Z. H. Huang, P. H. Cutler, N. M. Miskovsky, and T. E. Sullivan, Appl. Phys. Lett., 65:2562 (1994).
329. P. H. Cutler, Z. H. Huang, N. M. Miskovsky, and T. E. Sullivan, J. Vac. Sci. Technol. B, 13:526 (1995).
330. H. G. Maguire, M. Kamo, H. P. Lang, and H. J. Guntherodt, Ultramicroscopy, 42-44 part A 689 (1992).
331. G. V. Saparin, Diamond and Related Materials, 3:1337 (1994).
332. W. Zhu, C. A. Randall, A. R. Badzian, and R. Messier, J. Vac. Sci. Technol. A, 7:2315 (1989).
333. R. Schlesser, B. L. McCarson, M. T. McClure, and Z. Sitar, J. Vac. Sci. Technol. B, 16:689 (1998).
334. P. H. Cutler, Z. H. Huang, N. M. Miskovsky, P. D Ambrosio, and M. Chung, The 8th International Vacuum Microelectronics Conference Technical Digest, p. 278, July 30-August 3, 1995.
335. E. I. Givargizov, V. V. Zhirnov, N. N. Chubun, and A. B. Voronin, J. Vac. Sci. Technol. B, 15:442 (1997).
336. W. P. Kang, J. L. Davidson, Q. Li, J. F. Xu, D. L. Kinser, and D. V. Kerns, Sensors and Actuators A, 54:724 (1996).
337. D. Hong and D. Aslam, Proc. 8th Int, Vacuum Microelectronics Conf., 335 (1995).
338. R. L. Fink, Z. Li Tolt, and Z. Yaniv, Surface and Coatings Technology, 108-109:570 (1998).
339. J. L. Davidson, W. P. Kang, Y. Gurbuz, K. C. Holmes, L. G. Davis, A. Wisitsora-at, D. V. Kerns, R. L. Eidson, and T. Henderson, Diamond and Related Materials, (in press).
340. J. L. Davidson, W. P. Kang, L. Davis, K. Holmes, M. Howell, D. V. Kerns, and B. Henderson, Proc. Diamond Materials V Symp., The Electrochemical Society, 97-32:635 (1998).
341. J. L. Davidson and W. P. Kang, J. Chem. Vapor Deposit., 5:133 (1997).
342. G. M. Swain, A. B. Anderson, and J. C. Angus, MRS Bulletin, 56, Sept. 1998.
343. J. C. Angus, H. B. Martin, and U. Landau, Proceedings of ADC/FCT'99, 160 (1999).
344. M. Fryda, D. Herrmann, L. Schafer, and C. Klages, Proceedings of ADC/FCT'99, 165 (1999).
345. I. Lundstrom, S. Shivaraman, C. Svensson, and L. Lundkvist, Appl. Phys. Lett., 26:55 (1975).
346. T. Poteat and B. Lalevic, IEEE Trans. Electron Devices, ED-29:123 (1982).
347. P. Ruthes, S. Ashor, S. Fonash, and J. Ruths, IEEE Trans. Electron Devices, ED-28:1003 (1981).
348. U. Ackelid, M. Armgarth, A. Spetz, and I. Lundstrom, IEEE Electron Device Lett., EDL-7:353 (1985).
349. M. S. Shivaraman, J. Appl. Phys., 47:3592 (1976).
350. J. F. Ross, I. Robins, and B. C. Webb, Sensors and Actuators, 11:73 (1987).
351. K. Dobos, D. Krey, and G. Zimmer, Proc. Int. Meet. Chemical Sensors, 464 (1983).
352. W. P. Kang and C. K. Kim, Sensors and Actuators B, 22:47 (1994).
353. W. P. Kang and C. K. Kim, J. Appl. Phys., 75:4237 (1994).
354. W. P. Kang and C. K. Kim, Appl. Phys. Lett., 63:421 (1993).
355. I. Lundstrom, Technical Digest of The Fourth International Meeting on Chemical Sensors, Tokyo, Japan, 16 (1992).
356. W. P. Kang, Y. Gurbuz, J. L. Davidson, and D. V. Kerns, J. Electrochem. Soc., 141:2231 (1994).
357. W. P. Kang, Y. Gurbuz, J. L. Davidson and D. V. Kerns, Technical Digest IEEE Solid-State Sensor and Actuator Workshop, 172 (1994).
358. Y. Gurbuz, W. P. Kang, J. L. Davidson, D. V. Kerns, and B. Henderson, Diamond and Related Materials, 7:1723 (1998).
359. Y. Gurbuz, W. P. Kang, J. L. Davidson, and D. V. Kerns, IEEE Transactions on Electron Devices, 46:914 (1999).
360. Y. Gurbuz, W. P. Kang, J. L. Davidson, and D. V. Kerns, Sensors and Actuators B, 56:151 (1999).
361. Y. Gurbuz, W. P. Kang, and J. L. Davidson, Sensor and Actuator B, 49:115 (1998).
362. Y. Gurbuz, W. P. Kang, J. L. Davidson, and D. V. Kerns, J. Appl. Phys., 84:6935 (1998).
363. W. P. Kang and Y. Gurbuz, J. Appl. Phys., 75:8175 (1994).
364. D. R. Wur and J. L. Davidson, Presented at Symposium F, Fall MRS Meet., Boston, MA, December 1992.
365. M. Aslam, I. Taher, A. Masood, M. A. Tamor, and T. J. Potter, Appl. Phys. Lett., 60:2923 (1992).
366. M. Werner., Piezoresistivity effect of boron doped diamond thin films, Presented at the 3rd European Conf. On Diamond, Diamond-like and Related Coatings, Germany, Aug. 31-Sept 4, 1992.
367. M. Deguchi, N. Hase, M. Kitabatake, H. Kotera, S. Shima, and H. Sakakima, Proc. 5th Int. Conf. On New Diamond Technology and Science (Elsevier Science), 16:2 (1997).
368. A. Harrison, C. T. White, R. J. Colton, and D. W. Brenner, Thin Solid Films, 260:205 (1995).
369. D. R. Wur, J. L. Davidson, W. P. Kang, and D. L. Kinser, IEEE Journal of Microelectrom. Sys., 4:34 (1995).
370. J. L. Davidson, D.R. Wur, W. P. Kang, and D. L. Kinser, Sensors, 12:32 (1995).
371. J. L. Davidson, D. R. Wur, W. P. Kang, D. L. Kinser, and D. V. Kerns, Diamond and Related Materials, 5:86 (1996).
372. G. M. Swain, J. C. Angus, and A. B. Anderson, MRS Bulletin, 9:56 (1998).
373. G. M. Swain, Anal. Chem., 69:591A (1997).
374. H. B. Martin, A. Argoitia, U. Landau, A. B. Anderson, and J. C. Angus, J.Electrochem. Soc., 143:L133 (1996).
375. J. Xu, M. C. Granger, Q. Chen, T. E. Lister, and G. M. Swain, ibid. J. Electrochem. Soc., 143:L591 (1996).
376. J. Xu and G. M. Swain, Anal. Chem., 70:1502 (1998).
377. J. Xu and G. M. Swain, submitted to Electroanalysis.
378. S. Jolley, M. Koppang, T. Jackson and G. M. Swain, Anal. Chem., 69:4041 (1997).
379. M. Koppang, J. Blau, and G. M. Swain, Anal. Chem (in press).
380. M. C. Granger, J. Xu, J. W. Strojek and G. M. Swain, Anal. Chim. Acta (in press).
381. R. M. Wightman, Science, 240:415 (1988).
382. Michael N. Gardos, Electrochemical Society Proceedings, 97-32:465 (1997).
383. http://www.analog.com/techsupt/applicationnotes/ 80330675.pdf
384. J. E. Butler and R. L. Woodin, Phil. Trans. Royal Soc. Lon. A342:209 (1993).
385. S. J. Harris, Appl. Phys. Lett., 56:2298 (1990).
386. M. E. Coltrin and D. Dandy, J. Appl. Phys., 74:5803 (1993).
387. J. Goodwin, J. Appl. Phys., 74:6888 (1993).
388. J. Goodwin, J. Appl. Phys., 74:6895 (1993).
389. M. A. Cappelli, Handbook of Industrial Diamond and Diamond Films, eds. M.A. Prelas, G. Popovici and L. K. Bigelow, Marcel Dekker, New York, 865 (1998).
390. J. V. Bush and J. P. Dismukes, Synthetic Diamond: Emerging CVD Science and Technology, K. E. Spear, J. P. Dismukes, John Wiley, Eds., New York, 581 (1994).
391. A. T. Singer and J. V. Bush, Handbook of Industrial Diamond and Diamond Films, M. A. Prelas, G. Popovici and L. K. Bigelow, Marcel Dekker, Eds., New York, 1149 (1998).
392. J. V. Singer and J. P. Dismukes, Diamond and Related Materials, 3:295 (1994).
393. H. Windischmann, G. F. Epps, Y. Cong, and R. W. Collins, J. Appl. Phys., 69:2231 (1991).
394. H. Windischmann and G. F. Epps, Diamond and Related Materials, 1:656 (1992).
395. I. A. Martorell, W. D. Partlow, R. M. Young, J. J. Schreurs, and H. E. Saunders, Diamond and Related Materials, 8:29 (1999).