Technology and characterization of diamond field emitter structures

IEEE Transactions on Electron Devices

Volumn 45, Issue 4, 1998, Pages 977-985

  Dongsung Hong, ^a   Aslam, D M ^a  

^a Michigan State University   (United States)

Author keywords

CVD; diamond materials; electron emission; finite element methods

Indexed keywords

BORON-DOPED POLYCRYSTALLINE DIAMOND; DIAMOND GROWTH; DIAMOND MATERIALS; FIELD ENHANCEMENT; FILM TECHNOLOGY; HIGH CURRENT DENSITIES; PATTERNED STRUCTURE; SYSTEMATIC STUDY;

CHEMICAL VAPOR DEPOSITION; DIAMOND FILMS; ELECTRIC FIELDS; ELECTRON EMISSION; FIELD EMISSION; FINITE ELEMENT METHOD; GRAIN BOUNDARIES; SEMICONDUCTOR DOPING;

DIAMONDS;

EID: 84871717762     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.662815     Document Type: Article

References (20)

1. F. J. Himpsel, J. A. Knapp, J. A. van Vechten, and D. E. Eastman, "Quantum photoyield of diamond(111)-A stable negative-affinity emitter," Phys. Rev. B, vol. 20, p. 624, 1979.
2. J. van der Weide, Z. Zhang, P. K. Baumann, M. G. Wensell, J. Bernholc, and R. J. Nemanich, "Negative-electron-affinity effects on the diamond (100) surface," Phys. Rev. B, vol. 50, p. 5803, 1994.
3. I. Taher, M. Aslam, M. A. Tamor, T. J. Potter, and R. C. Elder, "Piezoresistive microsensors using p-type CVD diamond films," Sens. Actuators A, vol. 45, p. 35, 1994.
4. M. W. Geis, N. N. Efremow, J. D. Woodhouse, M. D. McAleese, M. Mar.ywka, D. G. Socker, and J. F. Hochedez, "Diamond cold cathode," IEEE Electron Device Lett., vol. 12, p. 456, 1991.
5. C. Xie, N. Kumar, C. C. Collins, T. J. Lee, H. Schmidt, and S. Wagal, "Electron field emission from amorphic diamond thin films," in The 6th Int. Vacuum Microelectron. Conf., Newport, RI, July 1993, p. 162.
6. D. Hong and M. Aslam, "Field-emission from p-type polycrystalline diamond films," J. Vac. Sci. Technol. B., vol. 13, no. 2, p. 427, 1995.
7. N. S. Xu, R. V. Latham, and Y. Tzeng, "Similarities in the cold electron emission characteristics of diamond coated molybdenum electrodes and polished bulk graphite surfaces," J. Phys. D., vol. 26, p. 1776, 1993.
8. V. V. Zhirnov, E. I. Givargizov, and P. S. Plekhanov, "Field emission from silicon spikes with diamond coatings," J. Vac. Sci. Technol. B., vol. 13, no. 2, p. 418, 1995.
9. K. Okano, K. Hosina, M. Iida, S. Koizumi, and T. Inuzuka, "Fabrication of a diamond field emitter array," Appl. Phys. Lett., vol. 64, no. 20, p. 2742, 1994.
10. A. Masood, M. Aslam, M. A. Tamor, and T. J. Potter, "Techniques for patterning of CVD diamond films on nondiamond substrates," J. Electrochem. Soc., vol. 135, p. L67, 1991.
11. A. Ghis, R. Meyer, P. Rambaud, F. Levy, and T. Leroux, "Sealed vacuum devices: Fluorescent microtip displays," IEEE Trans. Electron Devices vol. 38, p. 2320, Oct. 1991.
12. W. Zhu, G. P. Kochanski, S. Jin, and L. Seibles, "Defect-enhanced electron field-emission from chemical-vapor-deposited diamond," J. Appl. Phys., vol. 78, no. 4, p. 2707, 1995.
13. W. Zhu, G. P. Kochanski, S. Jin, L. Seibles, D. C. Jacobson, M. McCormack, and A. E. White, "Electron field-emission from ionimplanted diamond," Appl. Phys. Lett., vol. 67, no. 8, p. 1157, 1995.
14. G. S. Yang and M. Aslam, "Ultrahigh nucleation density for growth of smooth diamond films," Appl. Phys. Lett., vol. 66, no. 3, p. 311, 1995.
15. S. J. Kwon, D. M. Aslam, Y. B. Li, Y. H. Shin, and J. D. Lee, "Low voltage emission characteristics of the undoped polycrystalline diamond field emitter by MPCVD," in Tech. Dig., Proc. Int. Vacuum Microelectronics Conf., Kyongju, South Korea, 1997, pp. 475-479.
16. A. Masood, M. Aslam, M. A. Tamor, and T. J. Potter, "Synthesis and electrical characterization of boron-doped thin diamond films," Appl. Phys. Lett., vol. 61, no. 15, p. 1832, 1992.
17. A. Masood, "Technology and electronic properties of diamond film microsensors for thermal signals," Ph.D. dissertation, Michigan State Univ., East Lansing, 1992.
18. P. Baumann, S. P. Bozeman, B. L. Ward, and R. J. Nemanich, "Characterization of metal-diamond interfaces: Electron affinity and Schottky barrier height," in Diamond 96 Conf., Troy, France, Sept. 1996.
19. H. C. Lee and R. S. Huang, "Simulation and design of field emitter array," IEEE Electron Device Lett., vol. 11, p. 579, 1990.
20. M. Geis, J. C. Twichell, J. Macaulay, and K. Okano, "Electron fieldemission from diamond and other carbon materials after H2, O2 and Cs treatment," Appl. Phys. Lett., vol. 67, no. 9, p. 1328, 1995.