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Volumn 7, Issue 2-5, 1998, Pages 581-584

High temperature, high voltage operation of diamond Schottky diode

Author keywords

Diamond Schottky diode; High temperature; High voltage

Indexed keywords

DIAMOND FILMS; INTERFACES (MATERIALS); SEMICONDUCTING SILICON; THERMAL EFFECTS;

EID: 0031994402     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0925-9635(97)00200-8     Document Type: Article
Times cited : (73)

References (8)
  • 2
    • 0043021044 scopus 로고    scopus 로고
    • Silicon based contacts on diamond with high barrier height and thermal stability
    • Albuquerque, NM, USA, 9-14 June
    • P. Gluche, W. Ebert, A. Vescan, E. Kohn, Silicon based contacts on diamond with high barrier height and thermal stability, in: 3rd High Temperature Electronics Conference, Albuquerque, NM, USA, 9-14 June 1996.
    • (1996) 3rd High Temperature Electronics Conference
    • Gluche, P.1    Ebert, W.2    Vescan, A.3    Kohn, E.4
  • 3
    • 0038930579 scopus 로고
    • Growth of homoepitaxial diamond films on superpolished substrates in a pulsed microwave plasma
    • P. Mnzinger, O. Weis, Growth of homoepitaxial diamond films on superpolished substrates in a pulsed microwave plasma, Diamond Relat. Mater. 4 (1995) 458.
    • (1995) Diamond Relat. Mater. , vol.4 , pp. 458
    • Mnzinger, P.1    Weis, O.2
  • 4
    • 0030395822 scopus 로고    scopus 로고
    • Hydrogen-terminated diamond surfaces and interfaces
    • H. Kawarada, Hydrogen-terminated diamond surfaces and interfaces, Surf. Sci. Rep. 26 (1996) 205.
    • (1996) Surf. Sci. Rep. , vol.26 , pp. 205
    • Kawarada, H.1
  • 6
    • 58149325361 scopus 로고
    • I/V characteristics of epitaxial Schottky Au barrier diode on p+ diamond substrate
    • A. Vescan, W. Ebert, T.H. Borst, I/V Characteristics of epitaxial Schottky Au barrier diode on p+ diamond substrate, Diamond Relat. Mater. 4 (1995) 661.
    • (1995) Diamond Relat. Mater. , vol.4 , pp. 661
    • Vescan, A.1    Ebert, W.2    Borst, T.H.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.