Correlation of electrical properties with defects in a homoepitaxial chemical-vapor-deposited diamond

Materials Research Society Symposium - Proceedings

Volumn 416, Issue , 1996, Pages 343-348

  Han, S ^a   Rodriguez, G ^a   Taylor, A ^a   Plano, M A ^a   Moyer, M D ^a   Moreno, M A ^a   Pan, L S ^a   Black, D B ^a   Burdette, H ^a   Ager III, J W ^a   Chen, A ^a  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CORRELATION THEORY; CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; RAMAN SPECTROSCOPY; SINGLE CRYSTALS; STACKING FAULTS; SUBSTRATES; X RAY DIFFRACTION;

HIGH PRESSURE HIGH TEMPERATURE SUBSTRATE; MICROWAVE ASSISTED CHEMICAL VAPOR DEPOSITION; STRESS MEASUREMENT TECHNIQUE; STRUCTURAL DEFECTS; SUBSTRATE TEMPERATURE; TRANSIENT PHOTOCONDUCTIVITY MEASUREMENT; X RAY DIFFRACTION IMAGING;

DIAMOND FILMS;

EID: 0029757944     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)