Enhancement mode metal-semiconductor field effect transistors from thin-film polycrystalline diamond

IEEE Electron Device Letters

Volumn 19, Issue 4, 1998, Pages 112-114

  Looi, Hui Jin ^a   Pang, Lisa Y S ^a   Wang, Yanyang ^a   Whitfield, Michael D ^a   Jackman, Richard B ^a  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CHEMICAL VAPOR DEPOSITION; DIAMOND FILMS; LEAKAGE CURRENTS; METALLIZING; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING DIAMONDS; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE STRUCTURES; THIN FILM DEVICES; TRANSCONDUCTANCE;

SCHOTTKY BARRIERS;

MESFET DEVICES;

EID: 0032049086     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.663531     Document Type: Article

References (17)

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