Electrical properties of diamond for device applications

Materials Research Society Symposium - Proceedings

Volumn 416, Issue , 1996, Pages 319-330

  Fox, B A ^a   Hartsell, M L ^a   Malta, D M ^a   Wynands, H A ^a   Tessmer, G J ^a   Dreifus, D L ^a  

^a Kobe Steel USA Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CHEMICAL VAPOR DEPOSITION; DIAMOND FILMS; ELECTRIC PROPERTIES; ELECTRON DEVICES; ELECTRONIC PROPERTIES; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SINGLE CRYSTALS; TRANSPORT PROPERTIES; VOLTAGE MEASUREMENT;

ACCEPTOR CONCENTRATION; CAPACITANCE VOLTAGE MEASUREMENT; DONOR CONCENTRATION; HALL EFFECT MEASUREMENT; POLYCRYSTALLINE DIAMOND FILMS;

SEMICONDUCTING DIAMONDS;

EID: 0029757943     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (25)