Highly rectifying Au-contacts on diamond-on-silicon substrate

IEEE Electron Device Letters

Volumn 17, Issue 6, 1996, Pages 270-272

  Gluche, P ^a   Wolter, S D ^a,b   Borst, T H ^a   Ebert, W ^a   Vescan, A ^a,c   Kohn, E ^a,c  

^a UNIVERSITY OF ULM   (Germany)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

^c IEEE

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; DIAMOND FILMS; ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; FILM GROWTH; NUCLEATION; POINT CONTACTS; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE;

AC BIAS NUCLEATION; BREAKDOWN FIELD STRENGTH; GOLD CONTACTS; IMPEDANCE ANALYZER; MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION; RECTIFICATION RATIOS;

SCHOTTKY BARRIER DIODES;

EID: 0030169661     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.496454     Document Type: Article

References (8)

1. T. Tachibana and J. T. Glass, "Titanium carbide rectifying contacts on boron-doped polycrystalline diamond," Diamond and Relat. Mat., vol. 2, pp. 37-10, 1993.
2. M. C. Hicks, C. R. Wronski, S. A. Groth, and G. S. Gilldenblatt, "The barrier height of Schottky diodes with a chemical-vapore-deposited diamond base," J. Appl. Phys., vol. 65, no. 2, pp. 2139-2142, 1989.
3. 7 at high temperatures," in IEDM Tech. Dig., pp. 419-122, 1994.
4. M. W. Geis and N. N. Efremov, "High conductance, low-leakage diamond Schottky diodes," Appl. Phys. Lett., vol. 63, no. 7, pp. 952-954, 1993.
5. S. D. Wolter, T. H. Borst, and E. Kohn, "The nucleation of highly oriented diamond via an alternating substrate bias," Appl. Phys, Lett., submitted for publication.
6. A. Vescan, W. Ebert, T. H. Borst and E. Kohn, "Electrical characterization of diamond resistors etched by RIE," 6th Euro. Conf. Diamond, Diamond-like and Rel. Mat., Barcelona, 1995.
7. T. H. Borst and O. Weis, "Electrical characterization of homoepitaxial diamond films doped with B, P, Li and Na during crystal growth," Diamond Relat. Mat., vol. 4, p. 948, 1995.
8. R. Hessmer, M. Schreck, S. Geier and B. Stritzker, "Correlation between breakdown voltage and structural properties of polycrystalline and heteroepitaxial CVD diamond films," Diamond Rel. Mat., vol. 3, pp. 951-956, 1994.