Diamond surface-channel FET structure with 200 V breakdown voltage

IEEE Electron Device Letters

Volumn 18, Issue 11, 1997, Pages 547-549

  Gluche, P ^a,b   Aleksov, A ^b   Vescan, A ^a,b   Ebert, W ^b   Kohn, E ^a,b  

^a IEEE   (Germany)

^b UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; GATES (TRANSISTOR); SEMICONDUCTING DIAMONDS; SEMICONDUCTOR DEVICE MANUFACTURE;

HOLE CONDUCTIVE CHANNEL; POWER HANDLING CAPABILITY;

FIELD EFFECT TRANSISTORS;

EID: 0031275469     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.641441     Document Type: Article

References (8)

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8. A. Vescan, P. Gluche, W. Ebert, and E. Kohn, "High-temperature, high-voltage operation of pulse-doped diamand MESFET," IEEE Electron Dev Lett., vol. 18, pp. 222-224, 1997.