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Volumn 81, Issue 3, 1997, Pages 1505-1508

Field emission properties of diode devices based on amorphic diamond-Si heterojunctions

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELDS; ELECTRIC VARIABLES MEASUREMENT; ELECTRON EMISSION; HETEROJUNCTIONS; PLATINUM ALLOYS; RAMAN SPECTROSCOPY; SCANNING TUNNELING MICROSCOPY; SILICON WAFERS; TRANSCONDUCTANCE;

EID: 0031078518     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363915     Document Type: Article
Times cited : (12)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.