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Volumn 81, Issue 3, 1997, Pages 1505-1508
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Field emission properties of diode devices based on amorphic diamond-Si heterojunctions
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Author keywords
[No Author keywords available]
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Indexed keywords
AMORPHOUS FILMS;
ATOMIC FORCE MICROSCOPY;
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRIC FIELDS;
ELECTRIC VARIABLES MEASUREMENT;
ELECTRON EMISSION;
HETEROJUNCTIONS;
PLATINUM ALLOYS;
RAMAN SPECTROSCOPY;
SCANNING TUNNELING MICROSCOPY;
SILICON WAFERS;
TRANSCONDUCTANCE;
FIELD EMISSION PROPERTIES;
PLATINUM IRIDIUM ALLOYS;
VACUUM ARC DISCHARGE;
VOLTAGE RAMP DOWN;
DIAMOND FILMS;
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EID: 0031078518
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.363915 Document Type: Article |
Times cited : (12)
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References (14)
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