Influence of surface treatment and dopant concentration on field emission characteristics of boron-doped diamond thin films

Applied Physics Letters

Volumn 71, Issue 19, 1997, Pages 2806-2808

  Nagao, M ^a   Kondo, T ^a   Gotoh, Y ^a   Tsuji, H ^a   Ishikawa, J ^a   Miyata, K ^b   Kobashi, K ^b  

^a KYOTO UNIVERSITY   (Japan)

^b KOBE STEEL LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRONS; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SURFACE TREATMENT; THIN FILMS;

BORON DOPED DIAMOND THIN FILMS; DOPANT CONCENTRATION; FIELD EMISSION CHARACTERISTICS; FOWLER-NORDHEIM PLOTS; MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION;

DIAMOND FILMS;

EID: 0031274634     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120142     Document Type: Article

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