Field emission energy distribution analysis of wide-band-gap field emitters

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 2, 1998, Pages 689-692

  Schlesser, R ^a   McCarson, B L ^a   McClure, M T ^a   Sitar, Z ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CUBIC BORON NITRIDE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON SPECTROSCOPY; ENERGY GAP; FERMI LEVEL; FIELD EFFECT SEMICONDUCTOR DEVICES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING DIAMONDS; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON INJECTION; FIELD EMISSION ENERGY DISTRIBUTION ANALYSIS; WIDE BAND GAP FIELD EMITTERS;

ELECTRON EMISSION;

EID: 0032021770     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589882     Document Type: Article

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