High-preformance diamond surface-channel field-effect transistors and their operation mechanism

Diamond and Related Materials

Volumn 8, Issue 2-5, 1999, Pages 927-933

  Tsugawa, K ^a   Kitatani, K ^a   Noda, H ^a   Hokazono, A ^a   Hirose, K ^b   Tajima, M ^b   Kawarada, H ^a  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

Author keywords

Diamond; Hydrogen terminated surface; MESFET; MOSFET; P Type surface conductive layer

Indexed keywords

ELECTRIC INSULATORS; HYDROGEN; MESFET DEVICES; MOSFET DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE; THRESHOLD VOLTAGE;

HYDROGEN-TERMINATED DIAMOND SURFACES;

INDUSTRIAL DIAMONDS;

EID: 0032615292     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0925-9635(98)00449-x     Document Type: Article

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