Negative electron affinity mechanism for diamond surfaces

Applied Physics Letters

Volumn 72, Issue 20, 1998, Pages 2574-2576

  Krainsky, I L ^a   Asnin, V M ^a  

^a NASA GLENN RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000476992     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121422     Document Type: Article

References (17)

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2. R. L. Bell, Negative Electron Affinity Devices (Clarendon, Oxford, 1973).
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9. It was shown earlier 12 13 14 that rehydrogenation of as-grown, as-received CVD diamond films can be accomplished by exposure to molecular hydrogen. In this work we are corroborating the fact that rehydrogenation of annealed or treated diamond surfaces is possible only by exposure to atomic hydrogen.
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11. I. L. Krainsky and G. G. Lesny, J. Sci. Instrum. (to be published).
12. G. T. Mearini, I. L. Krainsky, and J. A. Dayton, Jr., Surf. Interface Anal. 21, 138 (1994).
13. G. T. Mearini, I. L. Krainsky, Y. X. Wang, J. A. Dayton, Jr., R. Ramasham, and M. F. Rose, Thin Solid Films 253, 151 (1994).
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15. p depends on a semiconductor band structure). The secondary electrons in this case are mostly the primaries which escaped to vacuum after energy relaxation in the process of optical phonon scattering inside the crystal.
16. We observed the similar effects on (100) and (111) faces of the 2b natural diamond.
17. I. Lindau and W. E. Spicer, J. Electron Spectrosc. Relat. Phenom. 3, 409 (1974).