Growth model for GaN with comparison to structural, optical, and electrical properties

Journal of Applied Physics

Volumn 84, Issue 4, 1998, Pages 1998-2010

  Koleske, D D ^a   Wickenden, A E ^a   Henry, R L ^a   DeSisto, W J ^a   Gorman, R J ^a  

^a Lab for Advanced Material Synthesis   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001434546     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368353     Document Type: Review

References (158)

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