On the kinetics of growth of highly defective GaN epilayers and the origin of the deep trap responsible for yellow-band luminescence

Applied Physics Letters

Volumn 71, Issue 3, 1997, Pages 347-349

  Liu, H ^a   Kim, J G ^a   Ludwig, M H ^a   Park, R M ^a  

^a University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001785969     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119971     Document Type: Article

References (13)

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