Effect of hydrogen on the molecular-beam-epitaxy growth of GaN on sapphire under Ga-rich conditions

Materials Research Society Symposium - Proceedings

Volumn 449, Issue , 1997, Pages 197-202

  Buczkowski, S L ^a   Yu, Z ^a   Richards Babb, M ^a   Giles, N C ^a   Romano, L T ^a   Mayers, T H ^a  

^a WEST VIRGINIA UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; HYDROGEN; MOLECULAR BEAM EPITAXY; NITRIDES; NUCLEATION; PLASMA APPLICATIONS;

GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030677555     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)