Residual impurities in GaN/Al2O3 grown by metalorganic vapor phase epitaxy

Journal of Electronic Materials

Volumn 25, Issue 5, 1996, Pages 799-803

  Ishibashi, Akihiko ^a   Takeishi, Hidemi ^a   Mannoh, Masaya ^a   Yabuuchi, Yasufumi ^b   Ban, Yuzaburoh ^a  

^a PANASONIC CORPORATION   (Japan)

^b Matsushita Technoresearch Inc   (Japan)

Author keywords

Al2O3; Carbon; GaN; Metalorganic vapor phase epitaxy (MOVPE); Residual impurity; Secondary ion mass spectroscopy (SIMS); Triethylgallium (TEGa); Trimethylgallium (TMGa); V III ratio

Indexed keywords

EID: 0001706464     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02666639     Document Type: Article

References (11)

1. S. Nakamura, T. Mukai and M. Senoh, Appl. Phys. Lett. 64, 1687 (1994).
2. I. Akasaki, H. Amano, H. Murakami, M. Sassa, H. Kato and K. Manabe, J. Cryst. Growth 128, 379 (1993).
3. H. Morkoç, S. Strite, G.B. Gao, M.E. Lin, B. Sverdlov and M. Burns, J. Appl. Phys. 76, 1363 (1994).
4. S. Strite and H. Morkoç, J. Vac. Sci. Technol. B 10, 1237 (1992).
5. M.A. Khan, M.S. Shur, J.N. Kuzunia, Q. Chen, J. Burm and W. Schaff, Appl. Phys. Lett. 66, 1083 (1995).
6. N. Kobayashi and T. Makimoto, Jpn. J. Appl. Phys. 24, L824 (1985).
7. I. Akasaki, H. Amano, Y. Koide, K. Hiramatsu and N. Sawaki, J. Cryst. Growth 98, 209 (1989).
8. Skinner, Advances in Organometallic Chemistry (Academic Press) 2, 49-114 (1964).
9. Y. Seki and K. Tanno, J. Electrochem. Soc. 122, 1108 (1975).
10. D.L. Rode and D.K. Gaskill, Appl. Phys. Lett. 99, 1972 (1995).
11. D.W. Jenkins and J.D. Dow, Phys. Rev. B 39, 3317 (1989).