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Volumn 449, Issue , 1997, Pages 161-172
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On surface cracking of ammonia for MBE growth of GaN
a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
AMMONIA;
LIGHT EMITTING DIODES;
NITRIDES;
PHOTOLUMINESCENCE;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTOR GROWTH;
SURFACE PROPERTIES;
GALLIUM NITRIDE;
MOLECULAR BEAM EPITAXY;
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EID: 0030676652
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (38)
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References (18)
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