SCOPUS 정보 검색 플랫폼

Journal of Crystal Growth

Volumn 178, Issue 1-2, 1997, Pages 56-73

Epitaxial growth of III-V nitride semiconductors by metalorganic chemical vapor deposition

(1) Dupuis, R D a

a The University of Texas at Austin (United States)

Author keywords

MOCVD; Optoelectronics; Semiconductor laser; Wide bandgap

Indexed keywords

FILM GROWTH; HETEROJUNCTIONS; HYDRIDES; INJECTION LASERS; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM COMPOUNDS; THIN FILMS; VAPOR PHASE EPITAXY; ENERGY GAP; OPTOELECTRONIC DEVICES; SEMICONDUCTOR GROWTH;

HIGH TEMPERATURE ELECTRONICS; HYDRIDE VAPOR PHASE EPITAXIAL TECHNIQUE; WIDE BANDGAP SEMICONDUCTORS;

SEMICONDUCTOR GROWTH; SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0031150305 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(97)00079-1 Document Type: Article

Times cited : (64)

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