On compensation and impurities in state-of-the-art GaN epilayers grown on sapphire

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 679-683

  Wickenden, A E ^a   Gaskill, D K ^a   Koleske, D D ^a   Doverspike, K ^a   Simons, D S ^a   Chi, P H ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CALCULATIONS; CARRIER CONCENTRATION; CRYSTAL IMPURITIES; ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; EPITAXIAL GROWTH; FILM GROWTH; SAPPHIRE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SUBSTRATES;

GALLIUM NITRIDE; IMPURITY BANDING; NATIVE DONOR;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0029766455     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)